Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method
The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annea...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/100807 http://hdl.handle.net/10220/18005 |
| _version_ | 1811692978860720128 |
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| author | Dang, Y. X. Fan, Weijun Ng, S. T. Wicaksono, Satrio Yoon, Soon Fatt Zhang, Dao Hua |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Dang, Y. X. Fan, Weijun Ng, S. T. Wicaksono, Satrio Yoon, Soon Fatt Zhang, Dao Hua |
| author_sort | Dang, Y. X. |
| collection | NTU |
| description | The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annealing temperatures. An As–Sb atomic interdiffusion at the heterointerface is proposed to model this effect. The compositional profile of the QW after interdiffusion is described by an error function distribution and calculated by a ten-band k· p method. The estimated interdiffusion constants D are ~10−17–10−16 cm2 / s in the above temperature range and an activation energy of 1±0.4 eV is obtained. |
| first_indexed | 2024-10-01T06:44:23Z |
| format | Journal Article |
| id | ntu-10356/100807 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:44:23Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1008072020-03-07T14:00:32Z Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method Dang, Y. X. Fan, Weijun Ng, S. T. Wicaksono, Satrio Yoon, Soon Fatt Zhang, Dao Hua School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The effect of annealing on the photoluminescence (PL) in GaAsSbN/GaAs quantum wells QWs grown by solid-source molecular-beam epitaxy has been investigated. The annealing time and temperature are 5 min and 650–750 °C, respectively. Low-temperature (4K) PL peaks shift to higher energies with the annealing temperatures. An As–Sb atomic interdiffusion at the heterointerface is proposed to model this effect. The compositional profile of the QW after interdiffusion is described by an error function distribution and calculated by a ten-band k· p method. The estimated interdiffusion constants D are ~10−17–10−16 cm2 / s in the above temperature range and an activation energy of 1±0.4 eV is obtained. Published version 2013-12-04T02:16:58Z 2019-12-06T20:28:39Z 2013-12-04T02:16:58Z 2019-12-06T20:28:39Z 2005 2005 Journal Article Dang, Y. X., Fan, W., Ng, S. T., Wicaksono, S., Yoon, S. F., & Zhang, D. H. (2005). Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method. Journal of applied physics, 98(2), 026102. 0021-8979 https://hdl.handle.net/10356/100807 http://hdl.handle.net/10220/18005 10.1063/1.1954886 en Journal of applied physics © 2005 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.1954886]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Dang, Y. X. Fan, Weijun Ng, S. T. Wicaksono, Satrio Yoon, Soon Fatt Zhang, Dao Hua Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method |
| title | Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method |
| title_full | Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method |
| title_fullStr | Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method |
| title_full_unstemmed | Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method |
| title_short | Study of interdiffusion in GaAsSbN∕GaAs quantum well structure by ten-band k⋅p method |
| title_sort | study of interdiffusion in gaassbn gaas quantum well structure by ten band k⋅p method |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/100807 http://hdl.handle.net/10220/18005 |
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