Tuning InAs quantum dots for high areal density and wideband emission
The authors report the effect of growth temperature and monolayer coverage on areal density and photoluminescence spectral width of InAs quantum dot QD . Areal density and spectral width were found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon proper t...
| Main Authors: | , , , |
|---|---|
| 其他作者: | |
| 格式: | Journal Article |
| 語言: | English |
| 出版: |
2013
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/100821 http://hdl.handle.net/10220/18130 |
| _version_ | 1826121003255726080 |
|---|---|
| author | Ngo, C. Y. Chua, S. J. Yoon, Soon Fatt Fan, Weijun |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ngo, C. Y. Chua, S. J. Yoon, Soon Fatt Fan, Weijun |
| author_sort | Ngo, C. Y. |
| collection | NTU |
| description | The authors report the effect of growth temperature and monolayer coverage on areal density and
photoluminescence spectral width of InAs quantum dot QD . Areal density and spectral width were
found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon
proper tuning, both high areal density and large photoluminescence spectral width were obtained.
Areal density of 1.5 1011 cm−2 is four times higher than those previously reported, while spectral
width of 136 nm is the broadest spectral width obtained without any forms of band gap engineering.
These results will contribute to an improvement in the performance of QD superluminescent
diode. |
| first_indexed | 2024-10-01T05:25:39Z |
| format | Journal Article |
| id | ntu-10356/100821 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:25:39Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1008212020-03-07T14:00:32Z Tuning InAs quantum dots for high areal density and wideband emission Ngo, C. Y. Chua, S. J. Yoon, Soon Fatt Fan, Weijun School of Electrical and Electronic Engineering Faculty of Engineering, A*STAR Institute of Materials Research and Engineering Electrical and Electronic Engineering The authors report the effect of growth temperature and monolayer coverage on areal density and photoluminescence spectral width of InAs quantum dot QD . Areal density and spectral width were found to be strongly dependent on growth temperature and monolayer coverage, respectively. Upon proper tuning, both high areal density and large photoluminescence spectral width were obtained. Areal density of 1.5 1011 cm−2 is four times higher than those previously reported, while spectral width of 136 nm is the broadest spectral width obtained without any forms of band gap engineering. These results will contribute to an improvement in the performance of QD superluminescent diode. 2013-12-06T04:35:55Z 2019-12-06T20:28:56Z 2013-12-06T04:35:55Z 2019-12-06T20:28:56Z 2007 2007 Journal Article Ngo, C. Y., Yoon, S. F., Fan, W., & Chua, S. J. (2007). Tuning InAs quantum dots for high areal density and wideband emission. Applied Physics Letters, 90(11), 113103. 0003-6951 https://hdl.handle.net/10356/100821 http://hdl.handle.net/10220/18130 10.1063/1.2713148 en Applied physics letters © 2007 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2713148. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf |
| spellingShingle | Electrical and Electronic Engineering Ngo, C. Y. Chua, S. J. Yoon, Soon Fatt Fan, Weijun Tuning InAs quantum dots for high areal density and wideband emission |
| title | Tuning InAs quantum dots for high areal density and wideband emission |
| title_full | Tuning InAs quantum dots for high areal density and wideband emission |
| title_fullStr | Tuning InAs quantum dots for high areal density and wideband emission |
| title_full_unstemmed | Tuning InAs quantum dots for high areal density and wideband emission |
| title_short | Tuning InAs quantum dots for high areal density and wideband emission |
| title_sort | tuning inas quantum dots for high areal density and wideband emission |
| topic | Electrical and Electronic Engineering |
| url | https://hdl.handle.net/10356/100821 http://hdl.handle.net/10220/18130 |
| work_keys_str_mv | AT ngocy tuninginasquantumdotsforhigharealdensityandwidebandemission AT chuasj tuninginasquantumdotsforhigharealdensityandwidebandemission AT yoonsoonfatt tuninginasquantumdotsforhigharealdensityandwidebandemission AT fanweijun tuninginasquantumdotsforhigharealdensityandwidebandemission |