Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser
Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the -conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band struc...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/100829 http://hdl.handle.net/10220/18169 |
| _version_ | 1826122110428250112 |
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| author | Zhu, Yuan-Hui Xu, Qiang Fan, Weijun Wang, Jian-Wei |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhu, Yuan-Hui Xu, Qiang Fan, Weijun Wang, Jian-Wei |
| author_sort | Zhu, Yuan-Hui |
| collection | NTU |
| description | Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate
the electronic structures of the -conduction and L-conduction subbands of GeSn/GeSiSn strained
quantum well structure with an arbitrary composition. Our theoretical model suggests that the band
structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well
by changing the mole fraction of -Sn and Si in the well and barrier layers, respectively. The optical
gain spectrum in the type I quantum well system is calculated, taking into account the electrons
leakage from the -valley to L-valley of the conduction band. We found that by increasing the mole
fraction of -Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect
can significantly enhance the transition probability, and a decrease in Si composition in the barrier
layer, which lowers the band edge of -conduction subbands, also comes to a larger optical gain. |
| first_indexed | 2024-10-01T05:43:08Z |
| format | Journal Article |
| id | ntu-10356/100829 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:43:08Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1008292020-03-07T14:00:32Z Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser Zhu, Yuan-Hui Xu, Qiang Fan, Weijun Wang, Jian-Wei School of Electrical and Electronic Engineering National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences DRNTU::Engineering::Electrical and electronic engineering Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the -conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of -Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the -valley to L-valley of the conduction band. We found that by increasing the mole fraction of -Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of -conduction subbands, also comes to a larger optical gain. Published version 2013-12-09T01:32:46Z 2019-12-06T20:29:05Z 2013-12-09T01:32:46Z 2019-12-06T20:29:05Z 2010 2010 Journal Article Zhu, Y. H., Xu, Q., Fan, W., & Wang, J. W. (2010). Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser. Journal of applied physics, 107, 073108. 0021-8979 https://hdl.handle.net/10356/100829 http://hdl.handle.net/10220/18169 10.1063/1.3329424 en Journal of applied physics © 2010 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.3329424. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 8 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhu, Yuan-Hui Xu, Qiang Fan, Weijun Wang, Jian-Wei Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser |
| title | Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser |
| title_full | Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser |
| title_fullStr | Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser |
| title_full_unstemmed | Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser |
| title_short | Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser |
| title_sort | theoretical gain of strained gesn sub 0 02 ge sub 1 x y sup si sub x sn sub y sup quantum well laser |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/100829 http://hdl.handle.net/10220/18169 |
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