The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law
We propose several physical mechanisms that may account for the difference between the nitrogen composition in GaAsN materials measured by secondary ion mass spectroscopy and x-ray diffraction. A simplified model proposed here proves that Vegard’s law remains valid as long as all nitrogen atoms i...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/100834 http://hdl.handle.net/10220/17960 |
| _version_ | 1826117947230257152 |
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| author | Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Loke, Wan Khai Ng, T. K. Wang, S. Z. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Loke, Wan Khai Ng, T. K. Wang, S. Z. |
| author_sort | Wang, S. Z. |
| collection | NTU |
| description | We propose several physical mechanisms that may account for the difference between the nitrogen
composition in GaAsN materials measured by secondary ion mass spectroscopy and x-ray
diffraction. A simplified model proposed here proves that Vegard’s law remains valid as long
as all nitrogen atoms in the GaAsN alloys are located substitutionally at the arsenic sites. The
theoretical results based on N-N pair defects are in good agreement with the experimental data,
suggesting that the N-N pairs are the predominant nitrogen-related defects that cause deviation
from the GaAsN lattice constant predicted by Vegard’s law. |
| first_indexed | 2024-10-01T04:35:22Z |
| format | Journal Article |
| id | ntu-10356/100834 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:35:22Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1008342020-03-07T14:00:32Z The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Loke, Wan Khai Ng, T. K. Wang, S. Z. School of Electrical and Electronic Engineering Singapore-Massachusetts Institute of Technology (MIT) Alliance DRNTU::Engineering::Electrical and electronic engineering We propose several physical mechanisms that may account for the difference between the nitrogen composition in GaAsN materials measured by secondary ion mass spectroscopy and x-ray diffraction. A simplified model proposed here proves that Vegard’s law remains valid as long as all nitrogen atoms in the GaAsN alloys are located substitutionally at the arsenic sites. The theoretical results based on N-N pair defects are in good agreement with the experimental data, suggesting that the N-N pairs are the predominant nitrogen-related defects that cause deviation from the GaAsN lattice constant predicted by Vegard’s law. Published version 2013-12-02T06:32:28Z 2019-12-06T20:29:09Z 2013-12-02T06:32:28Z 2019-12-06T20:29:09Z 2004 2004 Journal Article Wang, S. Z., Yoon, S. F., Fan, W., Loke, W. K., Ng, T. K., & Wang, S. Z. (2004). The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law. Journal of Applied Physics, 96(4), 2010. 0021-8979 https://hdl.handle.net/10356/100834 http://hdl.handle.net/10220/17960 10.1063/1.1767614 en Journal of applied physics © 2004 American Institute of Physics. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Applied Physics, American Institute of Physics. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1063/1.1767614]. 5 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Wang, S. Z. Yoon, Soon Fatt Fan, Weijun Loke, Wan Khai Ng, T. K. Wang, S. Z. The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law |
| title | The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law |
| title_full | The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law |
| title_fullStr | The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law |
| title_full_unstemmed | The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law |
| title_short | The role of nitrogen-nitrogen pairs in the deviation of the GaAsN lattice parameter from Vegard’s law |
| title_sort | role of nitrogen nitrogen pairs in the deviation of the gaasn lattice parameter from vegard s law |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/100834 http://hdl.handle.net/10220/17960 |
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