Trap levels in graphene oxide : a thermally stimulated current study

Trap levels in graphene oxide : a thermally stimulated current study

We report thermally stimulated current (TSC) experiments on graphene oxide (GO) to study the effects of various defect levels near the GO Fermi level. The TSC peaks are ascribed to detrapping from defect levels to the GO hopping transport energy level, and are found to be in agreement with the GO de...

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Bibliographic Details
Main Authors: Kajen, R. S., Pey, K. L., Vijila, C., Jaiswal, M., Saravanan, S., Ng, A. M. H., Wong, C. P., Loh, K. P., Chandrasekhar, Natarajan
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Mathematics and analysis::Simulations
Online Access:https://hdl.handle.net/10356/100949
http://hdl.handle.net/10220/18598
Description
Summary:We report thermally stimulated current (TSC) experiments on graphene oxide (GO) to study the effects of various defect levels near the GO Fermi level. The TSC peaks are ascribed to detrapping from defect levels to the GO hopping transport energy level, and are found to be in agreement with the GO density of states reported in the literature. This work will be useful in evaluating the use of GO in memory/dielectric/barrier applications.

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