Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on tria...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
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2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101083 http://hdl.handle.net/10220/16311 |
| _version_ | 1826122545484529664 |
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| author | Zhang, Junbin Syamal, Binit Zhou, Xing Chiah, Siau Ben Zhou, Hongtao Yuan, Li |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Junbin Syamal, Binit Zhou, Xing Chiah, Siau Ben Zhou, Hongtao Yuan, Li |
| author_sort | Zhang, Junbin |
| collection | NTU |
| description | This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on triangular well approximation and surface-potential based DD transport, a CM for generic metal-insulator-semiconductor (MIS) HEMTs can be developed, which is scalable over device physical and structural parameters. |
| first_indexed | 2024-10-01T05:49:54Z |
| format | Conference Paper |
| id | ntu-10356/101083 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:49:54Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1010832020-03-07T13:24:50Z Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism Zhang, Junbin Syamal, Binit Zhou, Xing Chiah, Siau Ben Zhou, Hongtao Yuan, Li School of Electrical and Electronic Engineering IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on triangular well approximation and surface-potential based DD transport, a CM for generic metal-insulator-semiconductor (MIS) HEMTs can be developed, which is scalable over device physical and structural parameters. 2013-10-10T01:13:30Z 2019-12-06T20:33:11Z 2013-10-10T01:13:30Z 2019-12-06T20:33:11Z 2012 2012 Conference Paper Zhou, X., Zhang, J., Syamal, B., Chiah, S. B., Zhou, H., & Yuan, L. (2012). Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-4. https://hdl.handle.net/10356/101083 http://hdl.handle.net/10220/16311 10.1109/ICSICT.2012.6467682 en |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhang, Junbin Syamal, Binit Zhou, Xing Chiah, Siau Ben Zhou, Hongtao Yuan, Li Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism |
| title | Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism |
| title_full | Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism |
| title_fullStr | Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism |
| title_full_unstemmed | Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism |
| title_short | Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism |
| title_sort | unified regional modeling of gan hemts with the 2deg and dd formalism |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/101083 http://hdl.handle.net/10220/16311 |
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