Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes
Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectivenes...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/101087 http://hdl.handle.net/10220/16310 |
| _version_ | 1811692591207415808 |
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| author | Tan, Cher Ming Fu, Chunmiao |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tan, Cher Ming Fu, Chunmiao |
| author_sort | Tan, Cher Ming |
| collection | NTU |
| description | Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectiveness of reservoir length. We found that current density has no impact at all, but higher line temperature improves the effectiveness. As for the low-K dielectric used, most of them do not affect the effectiveness except CDO which degrade its effectiveness. In all cases, the saturation length where the enhancement ceases remain at around 50 nm, and it is not affected by the above-mentioned parameters. |
| first_indexed | 2024-10-01T06:38:13Z |
| format | Conference Paper |
| id | ntu-10356/101087 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:38:13Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1010872020-03-07T13:24:50Z Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes Tan, Cher Ming Fu, Chunmiao School of Electrical and Electronic Engineering IEEE International Conference on Solid-State and Integrated Circuit Technology (11th : 2012 : Xi'an, China) DRNTU::Engineering::Electrical and electronic engineering Reservoir length in ULSI interconnections can enhance their electromigration lifetime. As low-K dielectric is employed in current technology node, and line current density and temperature increase as we advanced in technology node, we investigate the impact of the above-mentioned on the effectiveness of reservoir length. We found that current density has no impact at all, but higher line temperature improves the effectiveness. As for the low-K dielectric used, most of them do not affect the effectiveness except CDO which degrade its effectiveness. In all cases, the saturation length where the enhancement ceases remain at around 50 nm, and it is not affected by the above-mentioned parameters. 2013-10-10T01:10:11Z 2019-12-06T20:33:13Z 2013-10-10T01:10:11Z 2019-12-06T20:33:13Z 2012 2012 Conference Paper Tan, C. M., & Fu, C. (2012). Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-4. https://hdl.handle.net/10356/101087 http://hdl.handle.net/10220/16310 10.1109/ICSICT.2012.6467816 en |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Tan, Cher Ming Fu, Chunmiao Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes |
| title | Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes |
| title_full | Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes |
| title_fullStr | Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes |
| title_full_unstemmed | Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes |
| title_short | Effectiveness of reservoir length on electromigration lifetime enhancement for ULSI interconnects with advanced technology nodes |
| title_sort | effectiveness of reservoir length on electromigration lifetime enhancement for ulsi interconnects with advanced technology nodes |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/101087 http://hdl.handle.net/10220/16310 |
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