Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures
In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter,...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/101350 http://hdl.handle.net/10220/6428 |
| _version_ | 1826117448619786240 |
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| author | Gui, D. Ng, Chi Yung Chen, Tupei Liu, Yang Tse, Man Siu |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Gui, D. Ng, Chi Yung Chen, Tupei Liu, Yang Tse, Man Siu |
| author_sort | Gui, D. |
| collection | NTU |
| description | In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter, charge trapping in nc-Si leads to a shift in capacitance-voltage characteristic (i.e., a change in the flat-band voltage). In contrast, in the former the charge trapping leads to a dramatic reduction in the MOS capacitance. The original capacitance could be recovered after the release of the trapped charges by a small bias, UV light illumination, or low-temperature thermal annealing. |
| first_indexed | 2024-10-01T04:27:45Z |
| format | Journal Article |
| id | ntu-10356/101350 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:27:45Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/1013502020-03-07T14:02:46Z Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures Gui, D. Ng, Chi Yung Chen, Tupei Liu, Yang Tse, Man Siu School of Electrical and Electronic Engineering A*STAR Institute of Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter, charge trapping in nc-Si leads to a shift in capacitance-voltage characteristic (i.e., a change in the flat-band voltage). In contrast, in the former the charge trapping leads to a dramatic reduction in the MOS capacitance. The original capacitance could be recovered after the release of the trapped charges by a small bias, UV light illumination, or low-temperature thermal annealing. Published version 2010-09-07T08:39:30Z 2019-12-06T20:37:04Z 2010-09-07T08:39:30Z 2019-12-06T20:37:04Z 2005 2005 Journal Article Gui, D., Ng, C. Y., Chen, T. P., Liu, Y., & Tse, M. S. (2005). Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures. Electrochemical and Solid State Letters, 8(1), G8-G10. 1099-0062 https://hdl.handle.net/10356/101350 http://hdl.handle.net/10220/6428 10.1149/1.1830392 en Electrochemical and solid state letters Electrochemical and Solid State Letters © copyright 2005 Electrochemical Society. The journal's website is located at http://dx.doi.org.ezlibproxy1.ntu.edu.sg/10.1149/1.1830392 3 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Gui, D. Ng, Chi Yung Chen, Tupei Liu, Yang Tse, Man Siu Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures |
| title | Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures |
| title_full | Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures |
| title_fullStr | Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures |
| title_full_unstemmed | Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures |
| title_short | Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures |
| title_sort | modulation of capacitance magnitude by charging discharging in silicon nanocrystals distributed throughout the gate oxide in mos structures |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/101350 http://hdl.handle.net/10220/6428 |
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