Electronic transport in the multi-terminal graphene nanodevices
We examined the ac transport attribute of the multi-terminal structures in the absence and presence of magnetic field. We found that the ac response depends on the structural configurations and that the admittance varies with the features of the attached nanoribbons. In the vicinity of Dirac point t...
Main Authors: | , , , , |
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Format: | Journal Article |
Language: | English |
Published: |
2013
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Online Access: | https://hdl.handle.net/10356/101567 http://hdl.handle.net/10220/16785 |
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author | Ye, En-Jia Lan, Jin Sui, Wen-Quan Sun, Changqing Zhao, Xuean |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Ye, En-Jia Lan, Jin Sui, Wen-Quan Sun, Changqing Zhao, Xuean |
author_sort | Ye, En-Jia |
collection | NTU |
description | We examined the ac transport attribute of the multi-terminal structures in the absence and presence of magnetic field. We found that the ac response depends on the structural configurations and that the admittance varies with the features of the attached nanoribbons. In the vicinity of Dirac point the dc conductance manifests a dip or peak and the imaginary part (emittance) vanishes or not, depending on whether the attached ribbon is semiconductive or metallic. In the presence of magnetic field, the emittance becomes asymmetric reflecting the dynamic behaviors of electron and hole. |
first_indexed | 2024-10-01T06:45:41Z |
format | Journal Article |
id | ntu-10356/101567 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T06:45:41Z |
publishDate | 2013 |
record_format | dspace |
spelling | ntu-10356/1015672020-03-07T14:00:33Z Electronic transport in the multi-terminal graphene nanodevices Ye, En-Jia Lan, Jin Sui, Wen-Quan Sun, Changqing Zhao, Xuean School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We examined the ac transport attribute of the multi-terminal structures in the absence and presence of magnetic field. We found that the ac response depends on the structural configurations and that the admittance varies with the features of the attached nanoribbons. In the vicinity of Dirac point the dc conductance manifests a dip or peak and the imaginary part (emittance) vanishes or not, depending on whether the attached ribbon is semiconductive or metallic. In the presence of magnetic field, the emittance becomes asymmetric reflecting the dynamic behaviors of electron and hole. 2013-10-24T07:17:15Z 2019-12-06T20:40:41Z 2013-10-24T07:17:15Z 2019-12-06T20:40:41Z 2012 2012 Journal Article Ye, E.-J., Lan, J., Sui, W.-Q., Sun, C., & Zhao, X. (2012). Electronic transport in the multi-terminal graphene nanodevices. Physics letters A, 376(37), 2555-2561. 0375-9601 https://hdl.handle.net/10356/101567 http://hdl.handle.net/10220/16785 10.1016/j.physleta.2012.06.033 en Physics letters A |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ye, En-Jia Lan, Jin Sui, Wen-Quan Sun, Changqing Zhao, Xuean Electronic transport in the multi-terminal graphene nanodevices |
title | Electronic transport in the multi-terminal graphene nanodevices |
title_full | Electronic transport in the multi-terminal graphene nanodevices |
title_fullStr | Electronic transport in the multi-terminal graphene nanodevices |
title_full_unstemmed | Electronic transport in the multi-terminal graphene nanodevices |
title_short | Electronic transport in the multi-terminal graphene nanodevices |
title_sort | electronic transport in the multi terminal graphene nanodevices |
topic | DRNTU::Engineering::Electrical and electronic engineering |
url | https://hdl.handle.net/10356/101567 http://hdl.handle.net/10220/16785 |
work_keys_str_mv | AT yeenjia electronictransportinthemultiterminalgraphenenanodevices AT lanjin electronictransportinthemultiterminalgraphenenanodevices AT suiwenquan electronictransportinthemultiterminalgraphenenanodevices AT sunchangqing electronictransportinthemultiterminalgraphenenanodevices AT zhaoxuean electronictransportinthemultiterminalgraphenenanodevices |