Electronic transport in the multi-terminal graphene nanodevices

We examined the ac transport attribute of the multi-terminal structures in the absence and presence of magnetic field. We found that the ac response depends on the structural configurations and that the admittance varies with the features of the attached nanoribbons. In the vicinity of Dirac point t...

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Main Authors: Ye, En-Jia, Lan, Jin, Sui, Wen-Quan, Sun, Changqing, Zhao, Xuean
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/101567
http://hdl.handle.net/10220/16785
_version_ 1826126006624190464
author Ye, En-Jia
Lan, Jin
Sui, Wen-Quan
Sun, Changqing
Zhao, Xuean
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ye, En-Jia
Lan, Jin
Sui, Wen-Quan
Sun, Changqing
Zhao, Xuean
author_sort Ye, En-Jia
collection NTU
description We examined the ac transport attribute of the multi-terminal structures in the absence and presence of magnetic field. We found that the ac response depends on the structural configurations and that the admittance varies with the features of the attached nanoribbons. In the vicinity of Dirac point the dc conductance manifests a dip or peak and the imaginary part (emittance) vanishes or not, depending on whether the attached ribbon is semiconductive or metallic. In the presence of magnetic field, the emittance becomes asymmetric reflecting the dynamic behaviors of electron and hole.
first_indexed 2024-10-01T06:45:41Z
format Journal Article
id ntu-10356/101567
institution Nanyang Technological University
language English
last_indexed 2024-10-01T06:45:41Z
publishDate 2013
record_format dspace
spelling ntu-10356/1015672020-03-07T14:00:33Z Electronic transport in the multi-terminal graphene nanodevices Ye, En-Jia Lan, Jin Sui, Wen-Quan Sun, Changqing Zhao, Xuean School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We examined the ac transport attribute of the multi-terminal structures in the absence and presence of magnetic field. We found that the ac response depends on the structural configurations and that the admittance varies with the features of the attached nanoribbons. In the vicinity of Dirac point the dc conductance manifests a dip or peak and the imaginary part (emittance) vanishes or not, depending on whether the attached ribbon is semiconductive or metallic. In the presence of magnetic field, the emittance becomes asymmetric reflecting the dynamic behaviors of electron and hole. 2013-10-24T07:17:15Z 2019-12-06T20:40:41Z 2013-10-24T07:17:15Z 2019-12-06T20:40:41Z 2012 2012 Journal Article Ye, E.-J., Lan, J., Sui, W.-Q., Sun, C., & Zhao, X. (2012). Electronic transport in the multi-terminal graphene nanodevices. Physics letters A, 376(37), 2555-2561. 0375-9601 https://hdl.handle.net/10356/101567 http://hdl.handle.net/10220/16785 10.1016/j.physleta.2012.06.033 en Physics letters A
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Ye, En-Jia
Lan, Jin
Sui, Wen-Quan
Sun, Changqing
Zhao, Xuean
Electronic transport in the multi-terminal graphene nanodevices
title Electronic transport in the multi-terminal graphene nanodevices
title_full Electronic transport in the multi-terminal graphene nanodevices
title_fullStr Electronic transport in the multi-terminal graphene nanodevices
title_full_unstemmed Electronic transport in the multi-terminal graphene nanodevices
title_short Electronic transport in the multi-terminal graphene nanodevices
title_sort electronic transport in the multi terminal graphene nanodevices
topic DRNTU::Engineering::Electrical and electronic engineering
url https://hdl.handle.net/10356/101567
http://hdl.handle.net/10220/16785
work_keys_str_mv AT yeenjia electronictransportinthemultiterminalgraphenenanodevices
AT lanjin electronictransportinthemultiterminalgraphenenanodevices
AT suiwenquan electronictransportinthemultiterminalgraphenenanodevices
AT sunchangqing electronictransportinthemultiterminalgraphenenanodevices
AT zhaoxuean electronictransportinthemultiterminalgraphenenanodevices