Design of a switchable microwave absorber
A novel circuit analog absorber is presented in this letter, which consists of three layers: a complex impedance surface, a dielectric layer containing p-i-n diodes, and a conducting ground plane. The complex impedance surface is a periodic array of unit cells with lumped elements. p-i-n diodes are...
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Format: | Journal Article |
Language: | English |
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2013
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Online Access: | https://hdl.handle.net/10356/101572 http://hdl.handle.net/10220/16328 |
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author | Zhang, Qi Shen, Zhongxiang Wang, Jianpeng Lee, Kian Seng |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Zhang, Qi Shen, Zhongxiang Wang, Jianpeng Lee, Kian Seng |
author_sort | Zhang, Qi |
collection | NTU |
description | A novel circuit analog absorber is presented in this letter, which consists of three layers: a complex impedance surface, a dielectric layer containing p-i-n diodes, and a conducting ground plane. The complex impedance surface is a periodic array of unit cells with lumped elements. p-i-n diodes are employed to control the RF signal path to realize different effective thicknesses, which results in different absorbing frequencies. An example is fabricated and tested to demonstrate that the proposed absorber can achieve two switchable operations, one of which covers from 0.85 to 1.88 GHz with a -10-dB reflection coefficient, and the other from 2.66 to 5.23 GHz. |
first_indexed | 2024-10-01T07:44:55Z |
format | Journal Article |
id | ntu-10356/101572 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T07:44:55Z |
publishDate | 2013 |
record_format | dspace |
spelling | ntu-10356/1015722020-03-07T14:00:33Z Design of a switchable microwave absorber Zhang, Qi Shen, Zhongxiang Wang, Jianpeng Lee, Kian Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering A novel circuit analog absorber is presented in this letter, which consists of three layers: a complex impedance surface, a dielectric layer containing p-i-n diodes, and a conducting ground plane. The complex impedance surface is a periodic array of unit cells with lumped elements. p-i-n diodes are employed to control the RF signal path to realize different effective thicknesses, which results in different absorbing frequencies. An example is fabricated and tested to demonstrate that the proposed absorber can achieve two switchable operations, one of which covers from 0.85 to 1.88 GHz with a -10-dB reflection coefficient, and the other from 2.66 to 5.23 GHz. 2013-10-10T02:14:30Z 2019-12-06T20:40:44Z 2013-10-10T02:14:30Z 2019-12-06T20:40:44Z 2012 2012 Journal Article Zhang, Q., Shen, Z., Wang, J., & Lee, K. S. (2012). Design of a switchable microwave absorber. IEEE Antennas and Wireless Propagation Letters, 11, 1158-1161. https://hdl.handle.net/10356/101572 http://hdl.handle.net/10220/16328 10.1109/LAWP.2012.2220115 en IEEE Antennas and Wireless Propagation Letters |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhang, Qi Shen, Zhongxiang Wang, Jianpeng Lee, Kian Seng Design of a switchable microwave absorber |
title | Design of a switchable microwave absorber |
title_full | Design of a switchable microwave absorber |
title_fullStr | Design of a switchable microwave absorber |
title_full_unstemmed | Design of a switchable microwave absorber |
title_short | Design of a switchable microwave absorber |
title_sort | design of a switchable microwave absorber |
topic | DRNTU::Engineering::Electrical and electronic engineering |
url | https://hdl.handle.net/10356/101572 http://hdl.handle.net/10220/16328 |
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