A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology
A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and p...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
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2013
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| Online Access: | https://hdl.handle.net/10356/101586 http://hdl.handle.net/10220/16337 |
| _version_ | 1826110140526362624 |
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| author | Ye, Wanxin Yeo, Kiat Seng Zou, Qiong Ma, Kaixue |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ye, Wanxin Yeo, Kiat Seng Zou, Qiong Ma, Kaixue |
| author_sort | Ye, Wanxin |
| collection | NTU |
| description | A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and phase noise can be improved. Besides, a transformer-based buffer is used to reduce the total power consumption of the design and provide matching. From the simulation results, the proposed VCO achieves low phase noise from -95 to -102.2dBc/Hz at 1MHz offset from the oscillation frequency while consumes only 5.76 mW DC power for the whole chip. |
| first_indexed | 2024-10-01T02:29:36Z |
| format | Conference Paper |
| id | ntu-10356/101586 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:29:36Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1015862020-03-07T13:24:50Z A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology Ye, Wanxin Yeo, Kiat Seng Zou, Qiong Ma, Kaixue School of Electrical and Electronic Engineering IEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan) DRNTU::Engineering::Electrical and electronic engineering A 36 GHz low power voltage controlled oscillator (VCO) is proposed and designed in 0.18 μm SiGe BiCMOS process. The VCO core part adopts a triple coupled transformer to provide feedbacks and to decouple the base voltage from the collector of the bipolar transistors, such that the voltage swing and phase noise can be improved. Besides, a transformer-based buffer is used to reduce the total power consumption of the design and provide matching. From the simulation results, the proposed VCO achieves low phase noise from -95 to -102.2dBc/Hz at 1MHz offset from the oscillation frequency while consumes only 5.76 mW DC power for the whole chip. 2013-10-10T02:48:35Z 2019-12-06T20:40:54Z 2013-10-10T02:48:35Z 2019-12-06T20:40:54Z 2012 2012 Conference Paper Zou, Q., Ma, K., Ye, W., & Yeo, K. S. (2012). A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.244-247. https://hdl.handle.net/10356/101586 http://hdl.handle.net/10220/16337 10.1109/APCCAS.2012.6419017 en |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Ye, Wanxin Yeo, Kiat Seng Zou, Qiong Ma, Kaixue A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology |
| title | A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology |
| title_full | A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology |
| title_fullStr | A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology |
| title_full_unstemmed | A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology |
| title_short | A low power millimetre-wave VCO in 0.18 µm SiGe BiCMOS technology |
| title_sort | low power millimetre wave vco in 0 18 µm sige bicmos technology |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/101586 http://hdl.handle.net/10220/16337 |
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