A hole accelerator for InGaN/GaN light-emitting diodes
The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection in...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101663 http://hdl.handle.net/10220/24198 |
| _version_ | 1824456959718326272 |
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| author | Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Zhang, Yiping Ji, Yun Wang, Liancheng Zhu, Binbin Lu, Shunpeng Zhang, Xueliang Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Zhang, Yiping Ji, Yun Wang, Liancheng Zhu, Binbin Lu, Shunpeng Zhang, Xueliang Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan |
| author_sort | Zhang, Zi-Hui |
| collection | NTU |
| description | The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. |
| first_indexed | 2025-02-19T04:02:23Z |
| format | Journal Article |
| id | ntu-10356/101663 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T04:02:23Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1016632023-02-28T19:42:59Z A hole accelerator for InGaN/GaN light-emitting diodes Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Zhang, Yiping Ji, Yun Wang, Liancheng Zhu, Binbin Lu, Shunpeng Zhang, Xueliang Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences DRNTU::Engineering::Electrical and electronic engineering::Electric power The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2014-11-10T00:44:04Z 2019-12-06T20:42:28Z 2014-11-10T00:44:04Z 2019-12-06T20:42:28Z 2014 2014 Journal Article Zhang, Z.-H., Liu, W., Tan, S. T., Ji, Y., Wang, L., Zhu, B., et al. (2014). A hole accelerator for InGaN/GaN light-emitting diodes. Applied Physics Letters, 105(15), 153503-. https://hdl.handle.net/10356/101663 http://hdl.handle.net/10220/24198 10.1063/1.4898588 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4898588 ]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electric power Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Zhang, Yiping Ji, Yun Wang, Liancheng Zhu, Binbin Lu, Shunpeng Zhang, Xueliang Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan A hole accelerator for InGaN/GaN light-emitting diodes |
| title | A hole accelerator for InGaN/GaN light-emitting diodes |
| title_full | A hole accelerator for InGaN/GaN light-emitting diodes |
| title_fullStr | A hole accelerator for InGaN/GaN light-emitting diodes |
| title_full_unstemmed | A hole accelerator for InGaN/GaN light-emitting diodes |
| title_short | A hole accelerator for InGaN/GaN light-emitting diodes |
| title_sort | hole accelerator for ingan gan light emitting diodes |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electric power |
| url | https://hdl.handle.net/10356/101663 http://hdl.handle.net/10220/24198 |
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