High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC
Novel on-chip multiport symmetrical transformer that has high self-resonant frequency and good area efficiency is presented. This technique involves the unique way of intercrossing the transformer’s primary and secondary coil using multiple metallization layers. A stacked transformer, with the same...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/101957 http://hdl.handle.net/10220/6272 |
| _version_ | 1826113290712907776 |
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| author | Lim, Chee Chong Yeo, Kiat Seng Chew, Kok Wai Johnny Gu, Jiang Min Cabuk, Alper Lim, Suh Fei Boon, Chirn Chye Qiu, Ping Do, Manh Anh Chan, Lap |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lim, Chee Chong Yeo, Kiat Seng Chew, Kok Wai Johnny Gu, Jiang Min Cabuk, Alper Lim, Suh Fei Boon, Chirn Chye Qiu, Ping Do, Manh Anh Chan, Lap |
| author_sort | Lim, Chee Chong |
| collection | NTU |
| description | Novel on-chip multiport symmetrical transformer that has high self-resonant frequency and good area efficiency is presented. This technique involves the unique way of intercrossing the transformer’s primary and secondary coil using multiple metallization layers. A stacked transformer, with the same area utilization as the proposed device, is selected for performance
comparison. The proposed design has demonstrated a higher self-resonant frequency in differential transmission line transformer configuration, i.e., fd−SRF(Stacked) = 8 GHz and fd−SRF(Sym) = 10.35 GHz. The structure presented is fully compatible
with standard CMOS foundry processes. The silicon data reported in this letter are based on Chartered Semiconductor Manufacturing’s 0.13-μm RFCMOS technology node. |
| first_indexed | 2024-10-01T03:20:47Z |
| format | Journal Article |
| id | ntu-10356/101957 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:20:47Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | ntu-10356/1019572020-03-07T14:00:35Z High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC Lim, Chee Chong Yeo, Kiat Seng Chew, Kok Wai Johnny Gu, Jiang Min Cabuk, Alper Lim, Suh Fei Boon, Chirn Chye Qiu, Ping Do, Manh Anh Chan, Lap School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Novel on-chip multiport symmetrical transformer that has high self-resonant frequency and good area efficiency is presented. This technique involves the unique way of intercrossing the transformer’s primary and secondary coil using multiple metallization layers. A stacked transformer, with the same area utilization as the proposed device, is selected for performance comparison. The proposed design has demonstrated a higher self-resonant frequency in differential transmission line transformer configuration, i.e., fd−SRF(Stacked) = 8 GHz and fd−SRF(Sym) = 10.35 GHz. The structure presented is fully compatible with standard CMOS foundry processes. The silicon data reported in this letter are based on Chartered Semiconductor Manufacturing’s 0.13-μm RFCMOS technology node. Published version 2010-05-06T03:25:44Z 2019-12-06T20:47:21Z 2010-05-06T03:25:44Z 2019-12-06T20:47:21Z 2008 2008 Journal Article Lim, C. C., Yeo, K. S., Chew, K. W. J., Gu, J. M., Cabuk, A., Lim, S. F., et al. (2008). High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC. IEEE Electron Device Letters. 29(12), 1376-1379. 0741-3106 https://hdl.handle.net/10356/101957 http://hdl.handle.net/10220/6272 10.1109/LED.2008.2006765 en IEEE electron device letters © 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. 4 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Lim, Chee Chong Yeo, Kiat Seng Chew, Kok Wai Johnny Gu, Jiang Min Cabuk, Alper Lim, Suh Fei Boon, Chirn Chye Qiu, Ping Do, Manh Anh Chan, Lap High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC |
| title | High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC |
| title_full | High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC |
| title_fullStr | High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC |
| title_full_unstemmed | High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC |
| title_short | High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC |
| title_sort | high self resonant and area efficient monolithic transformer using novel intercoil crossing structure for silicon rfic |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/101957 http://hdl.handle.net/10220/6272 |
| work_keys_str_mv | AT limcheechong highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT yeokiatseng highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT chewkokwaijohnny highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT gujiangmin highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT cabukalper highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT limsuhfei highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT boonchirnchye highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT qiuping highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT domanhanh highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic AT chanlap highselfresonantandareaefficientmonolithictransformerusingnovelintercoilcrossingstructureforsiliconrfic |