Memory devices using a mixture of MoS2 and graphene oxide as the active layer
A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, elec...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/102270 http://hdl.handle.net/10220/19030 |
| _version_ | 1826118616887590912 |
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| author | Yin, Zongyou Zeng, Zhiyuan Liu, Juqing He, Qiyuan Chen, Peng Zhang, Hua |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Yin, Zongyou Zeng, Zhiyuan Liu, Juqing He, Qiyuan Chen, Peng Zhang, Hua |
| author_sort | Yin, Zongyou |
| collection | NTU |
| description | A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈102). |
| first_indexed | 2024-10-01T04:46:25Z |
| format | Journal Article |
| id | ntu-10356/102270 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:46:25Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1022702020-06-01T10:13:55Z Memory devices using a mixture of MoS2 and graphene oxide as the active layer Yin, Zongyou Zeng, Zhiyuan Liu, Juqing He, Qiyuan Chen, Peng Zhang, Hua School of Materials Science & Engineering DRNTU::Engineering::Materials A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈102). 2014-03-28T07:16:50Z 2019-12-06T20:52:27Z 2014-03-28T07:16:50Z 2019-12-06T20:52:27Z 2013 2013 Journal Article Yin, Z., Zeng, Z., Liu, J., He, Q., Chen, P., & Zhang, H. (2013). Memory devices using a mixture of MoS2 and graphene oxide as the active layer. Small, 9(5), 727-731. 1613-6810 https://hdl.handle.net/10356/102270 http://hdl.handle.net/10220/19030 10.1002/smll.201201940 en Small © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | DRNTU::Engineering::Materials Yin, Zongyou Zeng, Zhiyuan Liu, Juqing He, Qiyuan Chen, Peng Zhang, Hua Memory devices using a mixture of MoS2 and graphene oxide as the active layer |
| title | Memory devices using a mixture of MoS2 and graphene oxide as the active layer |
| title_full | Memory devices using a mixture of MoS2 and graphene oxide as the active layer |
| title_fullStr | Memory devices using a mixture of MoS2 and graphene oxide as the active layer |
| title_full_unstemmed | Memory devices using a mixture of MoS2 and graphene oxide as the active layer |
| title_short | Memory devices using a mixture of MoS2 and graphene oxide as the active layer |
| title_sort | memory devices using a mixture of mos2 and graphene oxide as the active layer |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/102270 http://hdl.handle.net/10220/19030 |
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