Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
This paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This wo...
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/102307 http://hdl.handle.net/10220/16376 |
| _version_ | 1811694685372022784 |
|---|---|
| author | Vaddi, Ramesh Kim, Tony Tae-Hyoung Pott, Vincent Lin, Julius Tsai Ming |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Vaddi, Ramesh Kim, Tony Tae-Hyoung Pott, Vincent Lin, Julius Tsai Ming |
| author_sort | Vaddi, Ramesh |
| collection | NTU |
| description | This paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This work further discusses the modeling of the NEM memory device and the scaling effects on the device performance. Finally, a memory cell consisting of the NEM memory device and two MOS transistors (1NEM-2T), and NEM NVM array structure are presented. |
| first_indexed | 2024-10-01T07:11:30Z |
| format | Conference Paper |
| id | ntu-10356/102307 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:11:30Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1023072020-03-07T13:24:51Z Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications Vaddi, Ramesh Kim, Tony Tae-Hyoung Pott, Vincent Lin, Julius Tsai Ming School of Electrical and Electronic Engineering IEEE International Reliability Physics Symposium (2012 : Anaheim, California, US) DRNTU::Engineering::Electrical and electronic engineering This paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This work further discusses the modeling of the NEM memory device and the scaling effects on the device performance. Finally, a memory cell consisting of the NEM memory device and two MOS transistors (1NEM-2T), and NEM NVM array structure are presented. Accepted version 2013-10-10T04:38:43Z 2019-12-06T20:53:07Z 2013-10-10T04:38:43Z 2019-12-06T20:53:07Z 2012 2012 Conference Paper Vaddi, R., Kim, T. T., Pott, V., & Lin, J. T. M. (2012). Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications. 2012 IEEE International Reliability Physics Symposium (IRPS), pp.ME.3.1-ME.3.6. https://hdl.handle.net/10356/102307 http://hdl.handle.net/10220/16376 10.1109/IRPS.2012.6241917 en © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/IRPS.2012.6241917]. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Vaddi, Ramesh Kim, Tony Tae-Hyoung Pott, Vincent Lin, Julius Tsai Ming Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications |
| title | Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications |
| title_full | Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications |
| title_fullStr | Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications |
| title_full_unstemmed | Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications |
| title_short | Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications |
| title_sort | design and analysis of anchorless shuttle nano electro mechanical non volatile memory for high temperature applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/102307 http://hdl.handle.net/10220/16376 |
| work_keys_str_mv | AT vaddiramesh designandanalysisofanchorlessshuttlenanoelectromechanicalnonvolatilememoryforhightemperatureapplications AT kimtonytaehyoung designandanalysisofanchorlessshuttlenanoelectromechanicalnonvolatilememoryforhightemperatureapplications AT pottvincent designandanalysisofanchorlessshuttlenanoelectromechanicalnonvolatilememoryforhightemperatureapplications AT linjuliustsaiming designandanalysisofanchorlessshuttlenanoelectromechanicalnonvolatilememoryforhightemperatureapplications |