Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared

We implemented spatial mapping of charge carrier density in the channel of a conventional polymer Field-Effect Transistor (FET) by mid-infrared Charge Modulation Spectroscopy (CMS). CMS spectra are recorded with a high sensitivity confocal Fourier Transform Infra-Red (FTIR) microscope by probing ele...

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Main Authors: Chin, Xin Yu, Yin, Jun, Wang, Zilong, Caironi, Mario, Soci, Cesare
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/102329
http://hdl.handle.net/10220/18976
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author Chin, Xin Yu
Yin, Jun
Wang, Zilong
Caironi, Mario
Soci, Cesare
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Chin, Xin Yu
Yin, Jun
Wang, Zilong
Caironi, Mario
Soci, Cesare
author_sort Chin, Xin Yu
collection NTU
description We implemented spatial mapping of charge carrier density in the channel of a conventional polymer Field-Effect Transistor (FET) by mid-infrared Charge Modulation Spectroscopy (CMS). CMS spectra are recorded with a high sensitivity confocal Fourier Transform Infra-Red (FTIR) microscope by probing electroinduced Infra-Red Active Vibrational (IRAV) modes and low-energy polaron bands in the spectral region 680–4000 cm−1. Thanks to the high specificity and strong oscillator strength of these modes, charge-induced reflectance measurements allow quantitative estimation of charge carrier densities within the FET channel, without the need for amplitude or phase modulation. This is illustrated by identifying the contribution of intrinsic and electrostatically induced polarons to conduction, and by mapping the polaron spatial distribution in a P3HT (Poly(3-hexylthiophene-2,5-diyl)) FET channel under different drain-source bias conditions. This work demonstrates the potential of mid-infrared charge modulation microscopy to characterize carrier injection and transport in semiconducting polymer materials.
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spelling ntu-10356/1023292023-02-28T19:42:01Z Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared Chin, Xin Yu Yin, Jun Wang, Zilong Caironi, Mario Soci, Cesare School of Physical and Mathematical Sciences DRNTU::Engineering::Computer science and engineering We implemented spatial mapping of charge carrier density in the channel of a conventional polymer Field-Effect Transistor (FET) by mid-infrared Charge Modulation Spectroscopy (CMS). CMS spectra are recorded with a high sensitivity confocal Fourier Transform Infra-Red (FTIR) microscope by probing electroinduced Infra-Red Active Vibrational (IRAV) modes and low-energy polaron bands in the spectral region 680–4000 cm−1. Thanks to the high specificity and strong oscillator strength of these modes, charge-induced reflectance measurements allow quantitative estimation of charge carrier densities within the FET channel, without the need for amplitude or phase modulation. This is illustrated by identifying the contribution of intrinsic and electrostatically induced polarons to conduction, and by mapping the polaron spatial distribution in a P3HT (Poly(3-hexylthiophene-2,5-diyl)) FET channel under different drain-source bias conditions. This work demonstrates the potential of mid-infrared charge modulation microscopy to characterize carrier injection and transport in semiconducting polymer materials. Published version 2014-03-26T04:08:11Z 2019-12-06T20:53:29Z 2014-03-26T04:08:11Z 2019-12-06T20:53:29Z 2014 2014 Journal Article Chin, X. Y., Yin, J., Wang, Z., Caironi, M., & Soci, C. (2014). Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared. Scientific Reports, 4, 3626-. 2045-2322 https://hdl.handle.net/10356/102329 http://hdl.handle.net/10220/18976 10.1038/srep03626 24406635 en Scientific reports © 2014 Nature Publishing Group. This paper was published in Scientific Reports and is made available as an electronic reprint (preprint) with permission of Nature Publishing Group. The paper can be found at the following official DOI: [http://dx.doi.org/10.1038/srep03626]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
spellingShingle DRNTU::Engineering::Computer science and engineering
Chin, Xin Yu
Yin, Jun
Wang, Zilong
Caironi, Mario
Soci, Cesare
Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared
title Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared
title_full Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared
title_fullStr Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared
title_full_unstemmed Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared
title_short Mapping polarons in polymer FETs by charge modulation microscopy in the mid-infrared
title_sort mapping polarons in polymer fets by charge modulation microscopy in the mid infrared
topic DRNTU::Engineering::Computer science and engineering
url https://hdl.handle.net/10356/102329
http://hdl.handle.net/10220/18976
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