Preparation of weavable, all-carbon fibers for non-volatile memory devices
Woven into your memories: Aligned multi-walled carbon nanotube (MWCNT) fibers are coated by a thin layer of graphene oxide (GO). The MWCNT fibers work as the top and bottom electrodes while the GO acts as the active layer. By simply cross-stacking two MWCNT@GO fibers, the memory cell obtained shows...
Main Authors: | , , , , |
---|---|
Other Authors: | |
Format: | Journal Article |
Language: | English |
Published: |
2014
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/102596 http://hdl.handle.net/10220/19093 |
_version_ | 1811677866482466816 |
---|---|
author | Sun, Geng Zhi Liu, Juqing Zheng, Lianxi Huang, Wei Zhang, Hua |
author2 | School of Materials Science & Engineering |
author_facet | School of Materials Science & Engineering Sun, Geng Zhi Liu, Juqing Zheng, Lianxi Huang, Wei Zhang, Hua |
author_sort | Sun, Geng Zhi |
collection | NTU |
description | Woven into your memories: Aligned multi-walled carbon nanotube (MWCNT) fibers are coated by a thin layer of graphene oxide (GO). The MWCNT fibers work as the top and bottom electrodes while the GO acts as the active layer. By simply cross-stacking two MWCNT@GO fibers, the memory cell obtained shows a write-once-read-many-times effect (see picture). |
first_indexed | 2024-10-01T02:44:10Z |
format | Journal Article |
id | ntu-10356/102596 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T02:44:10Z |
publishDate | 2014 |
record_format | dspace |
spelling | ntu-10356/1025962020-06-01T10:21:20Z Preparation of weavable, all-carbon fibers for non-volatile memory devices Sun, Geng Zhi Liu, Juqing Zheng, Lianxi Huang, Wei Zhang, Hua School of Materials Science & Engineering School of Mechanical and Aerospace Engineering DRNTU::Engineering::Materials Woven into your memories: Aligned multi-walled carbon nanotube (MWCNT) fibers are coated by a thin layer of graphene oxide (GO). The MWCNT fibers work as the top and bottom electrodes while the GO acts as the active layer. By simply cross-stacking two MWCNT@GO fibers, the memory cell obtained shows a write-once-read-many-times effect (see picture). 2014-04-03T07:37:04Z 2019-12-06T20:57:18Z 2014-04-03T07:37:04Z 2019-12-06T20:57:18Z 2013 2013 Journal Article Sun, G., Liu, J., Zheng, L., Huang, W., & Zhang, H. (2013). Preparation of weavable, all-carbon fibers for non-volatile memory devices. Angewandte Chemie International Edition, 52(50), 13351-13355. 1433-7851 https://hdl.handle.net/10356/102596 http://hdl.handle.net/10220/19093 10.1002/anie.201306770 en Angewandte Chemie International Edition © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
spellingShingle | DRNTU::Engineering::Materials Sun, Geng Zhi Liu, Juqing Zheng, Lianxi Huang, Wei Zhang, Hua Preparation of weavable, all-carbon fibers for non-volatile memory devices |
title | Preparation of weavable, all-carbon fibers for non-volatile memory devices |
title_full | Preparation of weavable, all-carbon fibers for non-volatile memory devices |
title_fullStr | Preparation of weavable, all-carbon fibers for non-volatile memory devices |
title_full_unstemmed | Preparation of weavable, all-carbon fibers for non-volatile memory devices |
title_short | Preparation of weavable, all-carbon fibers for non-volatile memory devices |
title_sort | preparation of weavable all carbon fibers for non volatile memory devices |
topic | DRNTU::Engineering::Materials |
url | https://hdl.handle.net/10356/102596 http://hdl.handle.net/10220/19093 |
work_keys_str_mv | AT sungengzhi preparationofweavableallcarbonfibersfornonvolatilememorydevices AT liujuqing preparationofweavableallcarbonfibersfornonvolatilememorydevices AT zhenglianxi preparationofweavableallcarbonfibersfornonvolatilememorydevices AT huangwei preparationofweavableallcarbonfibersfornonvolatilememorydevices AT zhanghua preparationofweavableallcarbonfibersfornonvolatilememorydevices |