Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 1...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/102699 http://hdl.handle.net/10220/16479 |
| _version_ | 1811681616404152320 |
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| author | Tan, Chuan Seng Peng, Lan Fan, Ji Li, Hong Yu Gao, Shan |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tan, Chuan Seng Peng, Lan Fan, Ji Li, Hong Yu Gao, Shan |
| author_sort | Tan, Chuan Seng |
| collection | NTU |
| description | Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 15-μm pitch is connected successfully and sustains thermal cycling. Postbonding delamination is found to be strongly affected by the wafer curvature and bond strength. The Cu-Cu hermetic seal ring shows a helium leak rate more than ten times lower than the reject limit (5 × 10-8 atm · cm/s based on MIL-STD-883E standard) without underfill. This provides a robust IC-to-IC connection density of 4.4 × 105 cm-2, suitable for future wafer-level 3-D integration. |
| first_indexed | 2024-10-01T03:43:47Z |
| format | Journal Article |
| id | ntu-10356/102699 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:43:47Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1026992020-03-07T14:00:34Z Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds Tan, Chuan Seng Peng, Lan Fan, Ji Li, Hong Yu Gao, Shan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 15-μm pitch is connected successfully and sustains thermal cycling. Postbonding delamination is found to be strongly affected by the wafer curvature and bond strength. The Cu-Cu hermetic seal ring shows a helium leak rate more than ten times lower than the reject limit (5 × 10-8 atm · cm/s based on MIL-STD-883E standard) without underfill. This provides a robust IC-to-IC connection density of 4.4 × 105 cm-2, suitable for future wafer-level 3-D integration. 2013-10-14T06:34:51Z 2019-12-06T20:59:22Z 2013-10-14T06:34:51Z 2019-12-06T20:59:22Z 2012 2012 Journal Article Tan, C. S., Peng, L., Fan, J., Li, H., & Gao, S. (2012). Three-Dimensional Wafer Stacking Using Cu–Cu Bonding for Simultaneous Formation of Electrical, Mechanical, and Hermetic Bonds. IEEE Transactions on Device and Materials Reliability, 12(2), 194-200. https://hdl.handle.net/10356/102699 http://hdl.handle.net/10220/16479 10.1109/TDMR.2012.2188802 en IEEE transactions on device and materials reliability © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Tan, Chuan Seng Peng, Lan Fan, Ji Li, Hong Yu Gao, Shan Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds |
| title | Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds |
| title_full | Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds |
| title_fullStr | Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds |
| title_full_unstemmed | Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds |
| title_short | Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds |
| title_sort | three dimensional wafer stacking using cu cu bonding for simultaneous formation of electrical mechanical and hermetic bonds |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/102699 http://hdl.handle.net/10220/16479 |
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