Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection
Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery)...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/102793 http://hdl.handle.net/10220/16505 |
| _version_ | 1826120847143731200 |
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| author | Wei, J. Liu, W. J. Fang, Z. Wang, Z. R. Wang, F. Wu, L. Zhang, J. F. Zhu, H. L. Sun, Xiaowei Tran, Xuan Anh Yu, Hongyu |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wei, J. Liu, W. J. Fang, Z. Wang, Z. R. Wang, F. Wu, L. Zhang, J. F. Zhu, H. L. Sun, Xiaowei Tran, Xuan Anh Yu, Hongyu |
| author_sort | Wei, J. |
| collection | NTU |
| description | Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔVth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs. |
| first_indexed | 2024-10-01T05:23:08Z |
| format | Journal Article |
| id | ntu-10356/102793 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:23:08Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1027932020-03-07T14:00:35Z Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection Wei, J. Liu, W. J. Fang, Z. Wang, Z. R. Wang, F. Wu, L. Zhang, J. F. Zhu, H. L. Sun, Xiaowei Tran, Xuan Anh Yu, Hongyu School of Electrical and Electronic Engineering A*STAR SIMTech DRNTU::Engineering::Electrical and electronic engineering Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔVth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs. 2013-10-16T03:29:04Z 2019-12-06T21:00:16Z 2013-10-16T03:29:04Z 2019-12-06T21:00:16Z 2012 2012 Journal Article Liu, W. J., Sun, X., Tran, X. A., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., & Yu, H. (2012). Vth shift in single-layer graphene field-effect transistors and its correlation with raman inspection. IEEE transactions on device and materials reliability, 12(2), 478-481. https://hdl.handle.net/10356/102793 http://hdl.handle.net/10220/16505 10.1109/TDMR.2012.2190414 en IEEE transactions on device and materials reliability |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Wei, J. Liu, W. J. Fang, Z. Wang, Z. R. Wang, F. Wu, L. Zhang, J. F. Zhu, H. L. Sun, Xiaowei Tran, Xuan Anh Yu, Hongyu Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection |
| title | Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection |
| title_full | Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection |
| title_fullStr | Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection |
| title_full_unstemmed | Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection |
| title_short | Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection |
| title_sort | vth shift in single layer graphene field effect transistors and its correlation with raman inspection |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/102793 http://hdl.handle.net/10220/16505 |
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