Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes
A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are pr...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/102941 http://hdl.handle.net/10220/19202 |
| _version_ | 1824454545185439744 |
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| author | Yang, Xuyong Mutlugun, Evren Zhao, Yongbiao Gao, Yuan Leck, Kheng Swee Ma, Yanyan Ke, Lin Tan, Swee Tiam Demir, Hilmi Volkan Sun, Xiao Wei |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yang, Xuyong Mutlugun, Evren Zhao, Yongbiao Gao, Yuan Leck, Kheng Swee Ma, Yanyan Ke, Lin Tan, Swee Tiam Demir, Hilmi Volkan Sun, Xiao Wei |
| author_sort | Yang, Xuyong |
| collection | NTU |
| description | A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. |
| first_indexed | 2025-02-19T03:24:01Z |
| format | Journal Article |
| id | ntu-10356/102941 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:24:01Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1029412020-03-07T12:37:11Z Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes Yang, Xuyong Mutlugun, Evren Zhao, Yongbiao Gao, Yuan Leck, Kheng Swee Ma, Yanyan Ke, Lin Tan, Swee Tiam Demir, Hilmi Volkan Sun, Xiao Wei School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. 2014-04-09T08:07:48Z 2019-12-06T21:02:33Z 2014-04-09T08:07:48Z 2019-12-06T21:02:33Z 2013 2013 Journal Article Yang, X., Mutlugun, E., Zhao, Y., Gao, Y., Leck, K. S., Ma, Y., et al. (2014). Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes. Small, 10(2), 247-252. 1613-6810 https://hdl.handle.net/10356/102941 http://hdl.handle.net/10220/19202 10.1002/smll.201301199 en Small © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Yang, Xuyong Mutlugun, Evren Zhao, Yongbiao Gao, Yuan Leck, Kheng Swee Ma, Yanyan Ke, Lin Tan, Swee Tiam Demir, Hilmi Volkan Sun, Xiao Wei Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes |
| title | Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes |
| title_full | Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes |
| title_fullStr | Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes |
| title_full_unstemmed | Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes |
| title_short | Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes |
| title_sort | solution processed tungsten oxide interfacial layer for efficient hole injection in quantum dot light emitting diodes |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics |
| url | https://hdl.handle.net/10356/102941 http://hdl.handle.net/10220/19202 |
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