Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation
Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene ph...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/103326 http://hdl.handle.net/10220/38734 |
| _version_ | 1811681430616408064 |
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| author | Yu, Xuechao Shen, Youde Liu, Tao Wu, Tao (Tom) Wang, Qi Jie |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yu, Xuechao Shen, Youde Liu, Tao Wu, Tao (Tom) Wang, Qi Jie |
| author_sort | Yu, Xuechao |
| collection | NTU |
| description | Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices. |
| first_indexed | 2024-10-01T03:40:49Z |
| format | Journal Article |
| id | ntu-10356/103326 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:40:49Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1033262022-02-16T16:30:29Z Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation Yu, Xuechao Shen, Youde Liu, Tao Wu, Tao (Tom) Wang, Qi Jie School of Electrical and Electronic Engineering Centre for Disruptive Photonic Technologies (CDPT) Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices. Published version 2015-09-23T03:59:47Z 2019-12-06T21:10:03Z 2015-09-23T03:59:47Z 2019-12-06T21:10:03Z 2015 2015 Journal Article Yu, X., Shen, Y., Liu, T., Wu, T., & Wang, Q. J. (2015). Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation. Scientific Reports, 5, 12014-. 2045-2322 https://hdl.handle.net/10356/103326 http://hdl.handle.net/10220/38734 10.1038/srep12014 26152225 en Scientific Reports This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ application/pdf |
| spellingShingle | Yu, Xuechao Shen, Youde Liu, Tao Wu, Tao (Tom) Wang, Qi Jie Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation |
| title | Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation |
| title_full | Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation |
| title_fullStr | Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation |
| title_full_unstemmed | Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation |
| title_short | Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation |
| title_sort | photocurrent generation in lateral graphene p n junction created by electron beam irradiation |
| url | https://hdl.handle.net/10356/103326 http://hdl.handle.net/10220/38734 |
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