Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper
Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective co...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/103803 http://hdl.handle.net/10220/19318 |
| _version_ | 1826120511972704256 |
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| author | Tay, Roland Yingjie Griep, Mark H. Mallick, Govind Tsang, Siu Hon Singh, Ram Sevak Tumlin, Travis Teo, Edwin Hang Tong Karna, Shashi P. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Tay, Roland Yingjie Griep, Mark H. Mallick, Govind Tsang, Siu Hon Singh, Ram Sevak Tumlin, Travis Teo, Edwin Hang Tong Karna, Shashi P. |
| author_sort | Tay, Roland Yingjie |
| collection | NTU |
| description | Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene-based applications. The development of h-BN films using chemical vapor deposition (CVD) has thus far led into nucleation of triangular or asymmetric diamond shapes on different metallic surfaces. Additionally, the average size of the triangular domains has remained relatively small (∼0.5 μm2) leading to a large number of grain boundaries and defects. While the morphology of Cu surfaces for CVD-grown graphene may have impacts on the nucleation density, domain sizes, thickness, and uniformity, the effects of the decreased roughness of Cu surface to develop h-BN films are unknown. Here, we report the growth and characterization of novel large area h-BN hexagons using highly electropolished Cu substrate under atmospheric pressure CVD conditions. We found that the nucleation density of h-BN is significantly reduced while domain sizes increase. In this study, the largest hexagonal-shape h-BN domain observed is 35 μm2, which is an order of magnitude larger than a typical triangular domain. As the domains coalesce to form a continuous film, the larger grain size offers a more pristine and smoother film with lesser grain boundaries induced defects |
| first_indexed | 2024-10-01T05:17:39Z |
| format | Journal Article |
| id | ntu-10356/103803 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:17:39Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1038032020-09-26T22:18:06Z Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper Tay, Roland Yingjie Griep, Mark H. Mallick, Govind Tsang, Siu Hon Singh, Ram Sevak Tumlin, Travis Teo, Edwin Hang Tong Karna, Shashi P. School of Electrical and Electronic Engineering School of Materials Science & Engineering Temasek Laboratories DRNTU::Engineering::Materials::Nanostructured materials DRNTU::Engineering::Electrical and electronic engineering Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene-based applications. The development of h-BN films using chemical vapor deposition (CVD) has thus far led into nucleation of triangular or asymmetric diamond shapes on different metallic surfaces. Additionally, the average size of the triangular domains has remained relatively small (∼0.5 μm2) leading to a large number of grain boundaries and defects. While the morphology of Cu surfaces for CVD-grown graphene may have impacts on the nucleation density, domain sizes, thickness, and uniformity, the effects of the decreased roughness of Cu surface to develop h-BN films are unknown. Here, we report the growth and characterization of novel large area h-BN hexagons using highly electropolished Cu substrate under atmospheric pressure CVD conditions. We found that the nucleation density of h-BN is significantly reduced while domain sizes increase. In this study, the largest hexagonal-shape h-BN domain observed is 35 μm2, which is an order of magnitude larger than a typical triangular domain. As the domains coalesce to form a continuous film, the larger grain size offers a more pristine and smoother film with lesser grain boundaries induced defects Accepted version 2014-05-12T02:27:44Z 2019-12-06T21:20:37Z 2014-05-12T02:27:44Z 2019-12-06T21:20:37Z 2014 2014 Journal Article Tay, R. Y., Griep, M. H., Mallick, G., Tsang, S. H., Singh, R. S., Tumlin, T., Teo, E. H. T., & Karna, S. P. (2014). Growth of Large Single-Crystalline Two-Dimensional Boron Nitride Hexagons on Electropolished Copper. Nano Letters, 14(2), 839-846. 1530-6984 https://hdl.handle.net/10356/103803 http://hdl.handle.net/10220/19318 10.1021/nl404207f en Nano Letters © 2014 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by Nano Letters, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/nl404207f]. 21 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Nanostructured materials DRNTU::Engineering::Electrical and electronic engineering Tay, Roland Yingjie Griep, Mark H. Mallick, Govind Tsang, Siu Hon Singh, Ram Sevak Tumlin, Travis Teo, Edwin Hang Tong Karna, Shashi P. Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper |
| title | Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper |
| title_full | Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper |
| title_fullStr | Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper |
| title_full_unstemmed | Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper |
| title_short | Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper |
| title_sort | growth of large single crystalline two dimensional boron nitride hexagons on electropolished copper |
| topic | DRNTU::Engineering::Materials::Nanostructured materials DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/103803 http://hdl.handle.net/10220/19318 |
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