Review of nanostructured resistive switching memristor and its applications
Resistive switching memristor, predicted as the fourth fundamental passive circuit element (in addition to resistor, capacitor, and inductor) in the world by Leon Chua in 1971 and demonstrated by Hewlett Packard laboratory in 2008, has attracted extensive research attention for its high scalability...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/103951 http://hdl.handle.net/10220/24651 |
| _version_ | 1811682740667416576 |
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| author | Hu, S. G. Wu, S. Y. Jia, W. W. Yu, Q. Deng, L. J. Fu, Y. Q. Liu, Y. Chen, T. P. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Hu, S. G. Wu, S. Y. Jia, W. W. Yu, Q. Deng, L. J. Fu, Y. Q. Liu, Y. Chen, T. P. |
| author_sort | Hu, S. G. |
| collection | NTU |
| description | Resistive switching memristor, predicted as the fourth fundamental passive circuit element (in addition to resistor, capacitor, and inductor) in the world by Leon Chua in 1971 and demonstrated by Hewlett Packard laboratory in 2008, has attracted extensive research attention for its high scalability and versatility. In this paper, we reviewed the working mechanisms and mathematical models of nanostructured resistive switching memristors, and examined various emerging applications of the memristors, including memory, analog, logic and neuromorphic applications. |
| first_indexed | 2024-10-01T04:01:39Z |
| format | Journal Article |
| id | ntu-10356/103951 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:01:39Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1039512020-03-07T14:00:35Z Review of nanostructured resistive switching memristor and its applications Hu, S. G. Wu, S. Y. Jia, W. W. Yu, Q. Deng, L. J. Fu, Y. Q. Liu, Y. Chen, T. P. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Resistive switching memristor, predicted as the fourth fundamental passive circuit element (in addition to resistor, capacitor, and inductor) in the world by Leon Chua in 1971 and demonstrated by Hewlett Packard laboratory in 2008, has attracted extensive research attention for its high scalability and versatility. In this paper, we reviewed the working mechanisms and mathematical models of nanostructured resistive switching memristors, and examined various emerging applications of the memristors, including memory, analog, logic and neuromorphic applications. 2015-01-16T03:37:00Z 2019-12-06T21:23:30Z 2015-01-16T03:37:00Z 2019-12-06T21:23:30Z 2014 2014 Journal Article Hu, S. G., Wu, S. Y., Jia, W. W., Yu, Q., Deng, L. J., Fu, Y. Q., et al. (2014). Review of Nanostructured Resistive Switching Memristor and Its Applications. Nanoscience and Nanotechnology Letters, 6(9), 729-757. https://hdl.handle.net/10356/103951 http://hdl.handle.net/10220/24651 10.1166/nnl.2014.1888 en Nanoscience and nanotechnology letters © 2014 American Scientific Publishers. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics Hu, S. G. Wu, S. Y. Jia, W. W. Yu, Q. Deng, L. J. Fu, Y. Q. Liu, Y. Chen, T. P. Review of nanostructured resistive switching memristor and its applications |
| title | Review of nanostructured resistive switching memristor and its applications |
| title_full | Review of nanostructured resistive switching memristor and its applications |
| title_fullStr | Review of nanostructured resistive switching memristor and its applications |
| title_full_unstemmed | Review of nanostructured resistive switching memristor and its applications |
| title_short | Review of nanostructured resistive switching memristor and its applications |
| title_sort | review of nanostructured resistive switching memristor and its applications |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics |
| url | https://hdl.handle.net/10356/103951 http://hdl.handle.net/10220/24651 |
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