Photovoltaic property of domain engineered epitaxial BiFeO3 films
The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect bein...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/104255 http://hdl.handle.net/10220/24704 |
| _version_ | 1826130316204441600 |
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| author | Zhou, Yang Fang, Liang You, Lu Ren, Peng Wang, Le Wang, Junling |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Zhou, Yang Fang, Liang You, Lu Ren, Peng Wang, Le Wang, Junling |
| author_sort | Zhou, Yang |
| collection | NTU |
| description | The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect being driven by the polarization modulated band bending at the metal/BiFeO3 interface. Nevertheless, the enhancement of short-circuit photocurrent is achieved and attributed to the conducting domain walls. Furthermore, we have estimated and compared the magnitudes of photoconductivity of domains and domain walls in BiFeO3 thin films, which can be used to explain the photocurrent improvements. These findings cast some light on the role of domain walls in ferroelectric photovoltaic effects and provide a simple route towards enhanced efficiency. |
| first_indexed | 2024-10-01T07:54:29Z |
| format | Journal Article |
| id | ntu-10356/104255 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:54:29Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1042552023-07-14T15:55:53Z Photovoltaic property of domain engineered epitaxial BiFeO3 films Zhou, Yang Fang, Liang You, Lu Ren, Peng Wang, Le Wang, Junling School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect being driven by the polarization modulated band bending at the metal/BiFeO3 interface. Nevertheless, the enhancement of short-circuit photocurrent is achieved and attributed to the conducting domain walls. Furthermore, we have estimated and compared the magnitudes of photoconductivity of domains and domain walls in BiFeO3 thin films, which can be used to explain the photocurrent improvements. These findings cast some light on the role of domain walls in ferroelectric photovoltaic effects and provide a simple route towards enhanced efficiency. Published version 2015-01-20T08:34:31Z 2019-12-06T21:29:09Z 2015-01-20T08:34:31Z 2019-12-06T21:29:09Z 2014 2014 Journal Article Zhou, Y., Fang, L., You, L., Ren, P., Wang, L., & Wang, J. (2014). Photovoltaic property of domain engineered epitaxial BiFeO3 films. Applied physics letters, 105(25), 252903-. https://hdl.handle.net/10356/104255 http://hdl.handle.net/10220/24704 10.1063/1.4905000 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4905000]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 6 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Zhou, Yang Fang, Liang You, Lu Ren, Peng Wang, Le Wang, Junling Photovoltaic property of domain engineered epitaxial BiFeO3 films |
| title | Photovoltaic property of domain engineered epitaxial BiFeO3 films |
| title_full | Photovoltaic property of domain engineered epitaxial BiFeO3 films |
| title_fullStr | Photovoltaic property of domain engineered epitaxial BiFeO3 films |
| title_full_unstemmed | Photovoltaic property of domain engineered epitaxial BiFeO3 films |
| title_short | Photovoltaic property of domain engineered epitaxial BiFeO3 films |
| title_sort | photovoltaic property of domain engineered epitaxial bifeo3 films |
| topic | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | https://hdl.handle.net/10356/104255 http://hdl.handle.net/10220/24704 |
| work_keys_str_mv | AT zhouyang photovoltaicpropertyofdomainengineeredepitaxialbifeo3films AT fangliang photovoltaicpropertyofdomainengineeredepitaxialbifeo3films AT youlu photovoltaicpropertyofdomainengineeredepitaxialbifeo3films AT renpeng photovoltaicpropertyofdomainengineeredepitaxialbifeo3films AT wangle photovoltaicpropertyofdomainengineeredepitaxialbifeo3films AT wangjunling photovoltaicpropertyofdomainengineeredepitaxialbifeo3films |