Photovoltaic property of domain engineered epitaxial BiFeO3 films

Photovoltaic property of domain engineered epitaxial BiFeO3 films

The effect of domain structure on the photovoltaic response of BiFeO3 vertical capacitors is investigated, by domain engineering using vicinal SrTiO3 substrates. It is observed that the open-circuit photovoltage remains unaffected by the domain structure, consistent with the photovoltaic effect bein...

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Bibliographic Details
Main Authors: Zhou, Yang, Fang, Liang, You, Lu, Ren, Peng, Wang, Le, Wang, Junling
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:https://hdl.handle.net/10356/104255
http://hdl.handle.net/10220/24704

Internet

https://hdl.handle.net/10356/104255
http://hdl.handle.net/10220/24704

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