Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocation...

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Bibliographic Details
Main Authors: D'Costa, Vijay Richard, Tan, Kian Hua, Jia, Bo Wen, Yoon, Soon Fatt, Yeo, Yee-Chia
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
III-V semiconductors
Critical point phenomena
Dielectric thin films
Dielectric function
Epitaxy
Online Access:https://hdl.handle.net/10356/104319
http://hdl.handle.net/10220/38809

Internet

https://hdl.handle.net/10356/104319
http://hdl.handle.net/10220/38809

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