P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier
A four-stage cascade power amplifier (PA) in 60 GHz industrial scientific medical (ISM) band is realized in 130 nm SiGe BiCMOS process. The PA employs single-ended topology with transistors in common-emitter. The design methodology of output referred 1-dB compression point (P1dB) oriented load pull...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/104619 http://hdl.handle.net/10220/26035 |
| _version_ | 1826125136792649728 |
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| author | Wu, Wenguang Gu, Jiangmin Lim, Wei Meng Yao, Feijie Sui, Wenquan Siek, Liter |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wu, Wenguang Gu, Jiangmin Lim, Wei Meng Yao, Feijie Sui, Wenquan Siek, Liter |
| author_sort | Wu, Wenguang |
| collection | NTU |
| description | A four-stage cascade power amplifier (PA) in 60 GHz industrial scientific medical (ISM) band is realized in 130 nm SiGe BiCMOS process. The PA employs single-ended topology with transistors in common-emitter. The design methodology of output referred 1-dB compression point (P1dB) oriented load pull is adopted in this PA. The matching circuit in each stage is composed of MIM capacitors and inductors implemented by coplanar waveguide with ground (CPWG). The chip area including pads is 1.08 mm × 0.42 mm. The measured results show the PA provides power gain of 17.3 dB, P1dB of 13.5 dBm, saturated output power (P sat) of 15.1 dBm and power added-efficiency (PAE) of 16% at 60 GHz. The PA consumes 190 mW from the 1.8 V power supply. Small signal measurements indicate that the PA covers the whole license free 60 GHz band. |
| first_indexed | 2024-10-01T06:31:45Z |
| format | Journal Article |
| id | ntu-10356/104619 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:31:45Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1046192020-03-07T13:57:30Z P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier Wu, Wenguang Gu, Jiangmin Lim, Wei Meng Yao, Feijie Sui, Wenquan Siek, Liter School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio A four-stage cascade power amplifier (PA) in 60 GHz industrial scientific medical (ISM) band is realized in 130 nm SiGe BiCMOS process. The PA employs single-ended topology with transistors in common-emitter. The design methodology of output referred 1-dB compression point (P1dB) oriented load pull is adopted in this PA. The matching circuit in each stage is composed of MIM capacitors and inductors implemented by coplanar waveguide with ground (CPWG). The chip area including pads is 1.08 mm × 0.42 mm. The measured results show the PA provides power gain of 17.3 dB, P1dB of 13.5 dBm, saturated output power (P sat) of 15.1 dBm and power added-efficiency (PAE) of 16% at 60 GHz. The PA consumes 190 mW from the 1.8 V power supply. Small signal measurements indicate that the PA covers the whole license free 60 GHz band. 2015-06-23T07:37:09Z 2019-12-06T21:36:22Z 2015-06-23T07:37:09Z 2019-12-06T21:36:22Z 2015 2015 Journal Article Wu, W., Gu, J., Lim, W. M., Yao, F., Sui, W., & Siek, L. (2015). P1dB optimization methodology for 130 nm SiGe BiCMOS 60 GHz power amplifier. Nanoscience and nanotechnology letters, 7(3), 272-275. 1941-4900 https://hdl.handle.net/10356/104619 http://hdl.handle.net/10220/26035 10.1166/nnl.2015.1941 en Nanoscience and nanotechnology letters © 2015 American Scientific Publishers. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio Wu, Wenguang Gu, Jiangmin Lim, Wei Meng Yao, Feijie Sui, Wenquan Siek, Liter P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier |
| title | P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier |
| title_full | P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier |
| title_fullStr | P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier |
| title_full_unstemmed | P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier |
| title_short | P1dB optimization methodology for 130 nm SiGe BiCMOS 60GHz power amplifier |
| title_sort | p1db optimization methodology for 130 nm sige bicmos 60ghz power amplifier |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio |
| url | https://hdl.handle.net/10356/104619 http://hdl.handle.net/10220/26035 |
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