InP based quantum dots for long wavelength emissions and their post-growth bandgap tuning
InP based III–V compound semiconductor quantum dot (QD) structures emitting at mid-infrared range were grown by using metal-organic chemical vapor deposition (MOCVD). A two-step growth of QDs method was used to grow the QDs to improve the QDs' shape, dot density and the dot size uniformity. Emi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/104836 http://hdl.handle.net/10220/25993 |