Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene
In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanor...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/104885 http://hdl.handle.net/10220/20367 http://dx.doi.org/10.1063/1.4891558 |
| _version_ | 1811689836140036096 |
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| author | Zhang, Xi Wang, Chao Diao, Dongfeng Sun, Chang Qing |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhang, Xi Wang, Chao Diao, Dongfeng Sun, Chang Qing |
| author_sort | Zhang, Xi |
| collection | NTU |
| description | In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanoribbons are stable with proper amounts of excess electrons which can provide net spin; (2) Since under-coordination induces lattice relaxation and potential well modulation, electrons tend to be trapped at edges; and (3) Neither large amount of excess electrons nor positive charges can induce magnetism. This work shed light on the development of graphene devices in its magnetic applications. |
| first_indexed | 2024-10-01T05:54:26Z |
| format | Journal Article |
| id | ntu-10356/104885 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:54:26Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1048852019-12-06T21:41:58Z Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene Zhang, Xi Wang, Chao Diao, Dongfeng Sun, Chang Qing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanoribbons are stable with proper amounts of excess electrons which can provide net spin; (2) Since under-coordination induces lattice relaxation and potential well modulation, electrons tend to be trapped at edges; and (3) Neither large amount of excess electrons nor positive charges can induce magnetism. This work shed light on the development of graphene devices in its magnetic applications. Published version 2014-08-21T06:21:42Z 2019-12-06T21:41:58Z 2014-08-21T06:21:42Z 2019-12-06T21:41:58Z 2014 2014 Journal Article Zhang, X., Wang, C., Sun, C. Q., & Diao, D. (2014). Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene. Applied Physics Letters, 105(4), 042402-. 0003-6951 https://hdl.handle.net/10356/104885 http://hdl.handle.net/10220/20367 http://dx.doi.org/10.1063/1.4891558 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4891558]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhang, Xi Wang, Chao Diao, Dongfeng Sun, Chang Qing Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene |
| title | Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene |
| title_full | Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene |
| title_fullStr | Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene |
| title_full_unstemmed | Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene |
| title_short | Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene |
| title_sort | magnetism induced by excess electrons trapped at diamagnetic edge quantum well in multi layer graphene |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/104885 http://hdl.handle.net/10220/20367 http://dx.doi.org/10.1063/1.4891558 |
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