Property study of aluminium oxide thin films by thermal annealing

Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surf...

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Main Authors: Zhao, Zhiwei, Tay, Beng Kang
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/105232
http://hdl.handle.net/10220/16801
http://dx.doi.org/10.1002/pssc.201084181
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author Zhao, Zhiwei
Tay, Beng Kang
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhao, Zhiwei
Tay, Beng Kang
author_sort Zhao, Zhiwei
collection NTU
description Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surfaces of aluminium oxide thin films remained smooth up to 600 °C. Crystallization is induced for the film annealed at 900 °C. It was also found that refractive index of the films increased with increasing the annealing temperature. Strong frequency dispersion of refractive index was found and fitted to a single oscillator model. The dispersion parameters, such as single oscillator energy, dispersion energy, average oscillator strength and its related wavelength, were estimated.
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spelling ntu-10356/1052322019-12-06T21:47:46Z Property study of aluminium oxide thin films by thermal annealing Zhao, Zhiwei Tay, Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surfaces of aluminium oxide thin films remained smooth up to 600 °C. Crystallization is induced for the film annealed at 900 °C. It was also found that refractive index of the films increased with increasing the annealing temperature. Strong frequency dispersion of refractive index was found and fitted to a single oscillator model. The dispersion parameters, such as single oscillator energy, dispersion energy, average oscillator strength and its related wavelength, were estimated. 2013-10-24T07:42:04Z 2019-12-06T21:47:46Z 2013-10-24T07:42:04Z 2019-12-06T21:47:46Z 2011 2011 Journal Article Zhao, Z., & Tay, B. K. (2012). Property study of aluminium oxide thin films by thermal annealing. physica status solidi (c), 9(1), 77-80. 1862-6351 https://hdl.handle.net/10356/105232 http://hdl.handle.net/10220/16801 http://dx.doi.org/10.1002/pssc.201084181 en physica status solidi (c)
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Zhao, Zhiwei
Tay, Beng Kang
Property study of aluminium oxide thin films by thermal annealing
title Property study of aluminium oxide thin films by thermal annealing
title_full Property study of aluminium oxide thin films by thermal annealing
title_fullStr Property study of aluminium oxide thin films by thermal annealing
title_full_unstemmed Property study of aluminium oxide thin films by thermal annealing
title_short Property study of aluminium oxide thin films by thermal annealing
title_sort property study of aluminium oxide thin films by thermal annealing
topic DRNTU::Engineering::Electrical and electronic engineering
url https://hdl.handle.net/10356/105232
http://hdl.handle.net/10220/16801
http://dx.doi.org/10.1002/pssc.201084181
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