Property study of aluminium oxide thin films by thermal annealing
Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surf...
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Format: | Journal Article |
Language: | English |
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2013
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Online Access: | https://hdl.handle.net/10356/105232 http://hdl.handle.net/10220/16801 http://dx.doi.org/10.1002/pssc.201084181 |
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author | Zhao, Zhiwei Tay, Beng Kang |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Zhao, Zhiwei Tay, Beng Kang |
author_sort | Zhao, Zhiwei |
collection | NTU |
description | Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surfaces of aluminium oxide thin films remained smooth up to 600 °C. Crystallization is induced for the film annealed at 900 °C. It was also found that refractive index of the films increased with increasing the annealing temperature. Strong frequency dispersion of refractive index was found and fitted to a single oscillator model. The dispersion parameters, such as single oscillator energy, dispersion energy, average oscillator strength and its related wavelength, were estimated. |
first_indexed | 2024-10-01T05:22:30Z |
format | Journal Article |
id | ntu-10356/105232 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T05:22:30Z |
publishDate | 2013 |
record_format | dspace |
spelling | ntu-10356/1052322019-12-06T21:47:46Z Property study of aluminium oxide thin films by thermal annealing Zhao, Zhiwei Tay, Beng Kang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surfaces of aluminium oxide thin films remained smooth up to 600 °C. Crystallization is induced for the film annealed at 900 °C. It was also found that refractive index of the films increased with increasing the annealing temperature. Strong frequency dispersion of refractive index was found and fitted to a single oscillator model. The dispersion parameters, such as single oscillator energy, dispersion energy, average oscillator strength and its related wavelength, were estimated. 2013-10-24T07:42:04Z 2019-12-06T21:47:46Z 2013-10-24T07:42:04Z 2019-12-06T21:47:46Z 2011 2011 Journal Article Zhao, Z., & Tay, B. K. (2012). Property study of aluminium oxide thin films by thermal annealing. physica status solidi (c), 9(1), 77-80. 1862-6351 https://hdl.handle.net/10356/105232 http://hdl.handle.net/10220/16801 http://dx.doi.org/10.1002/pssc.201084181 en physica status solidi (c) |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Zhao, Zhiwei Tay, Beng Kang Property study of aluminium oxide thin films by thermal annealing |
title | Property study of aluminium oxide thin films by thermal annealing |
title_full | Property study of aluminium oxide thin films by thermal annealing |
title_fullStr | Property study of aluminium oxide thin films by thermal annealing |
title_full_unstemmed | Property study of aluminium oxide thin films by thermal annealing |
title_short | Property study of aluminium oxide thin films by thermal annealing |
title_sort | property study of aluminium oxide thin films by thermal annealing |
topic | DRNTU::Engineering::Electrical and electronic engineering |
url | https://hdl.handle.net/10356/105232 http://hdl.handle.net/10220/16801 http://dx.doi.org/10.1002/pssc.201084181 |
work_keys_str_mv | AT zhaozhiwei propertystudyofaluminiumoxidethinfilmsbythermalannealing AT taybengkang propertystudyofaluminiumoxidethinfilmsbythermalannealing |