In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations
We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor d...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105293 http://hdl.handle.net/10220/47403 http://dx.doi.org/10.1063/1.5058717 |
| _version_ | 1826125535356387328 |
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| author | Wang, Yue Lee, Kwang Hong Loke, Wan Khai Chiah, Ben Siau Zhou, Xing Yoon, Soon Fatt Tan, Chuan Seng Fitzgerald, Eugene |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wang, Yue Lee, Kwang Hong Loke, Wan Khai Chiah, Ben Siau Zhou, Xing Yoon, Soon Fatt Tan, Chuan Seng Fitzgerald, Eugene |
| author_sort | Wang, Yue |
| collection | NTU |
| description | We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ∼100 through optimizing the base doping concentration (C-doped, ∼ 1.9×1019/cm3), base layer thickness (∼55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BVceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform. |
| first_indexed | 2024-10-01T06:37:54Z |
| format | Journal Article |
| id | ntu-10356/105293 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:37:54Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/1052932019-12-06T21:48:51Z In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations Wang, Yue Lee, Kwang Hong Loke, Wan Khai Chiah, Ben Siau Zhou, Xing Yoon, Soon Fatt Tan, Chuan Seng Fitzgerald, Eugene School of Electrical and Electronic Engineering Transistors DRNTU::Engineering::Electrical and electronic engineering Knee Voltage We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor deposition (MOCVD). With the assistance of numerical simulation, we were able to achieve high performance GaAs HBTs with DC current gain of ∼100 through optimizing the base doping concentration (C-doped, ∼ 1.9×1019/cm3), base layer thickness (∼55 nm), and the sub-collector doping concentration (Te-doped, > 5×1018/cm3). The breakdown voltage at base (BVceo) of higher than 9.43 V was realized with variation of < 3% across the 200 mm wafer. These results could enable applications such as power amplifiers for mobile phone handsets and monolithic integration of HBTs with standard Si-CMOS transistors on a common Si platform. NRF (Natl Research Foundation, S’pore) Published version 2019-01-07T06:50:10Z 2019-12-06T21:48:51Z 2019-01-07T06:50:10Z 2019-12-06T21:48:51Z 2018 Journal Article Wang, Y., Lee, K. H., Loke, W. K., Chiah, S. B., Zhou, X., Yoon, S. F., ... Fitzgerald, E. (2018). In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates: Effects of base thickness, base and sub-collector doping concentrations. AIP Advances, 8(11), 115132-. doi:10.1063/1.5058717 https://hdl.handle.net/10356/105293 http://hdl.handle.net/10220/47403 http://dx.doi.org/10.1063/1.5058717 en AIP Advances © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). 7 p. application/pdf |
| spellingShingle | Transistors DRNTU::Engineering::Electrical and electronic engineering Knee Voltage Wang, Yue Lee, Kwang Hong Loke, Wan Khai Chiah, Ben Siau Zhou, Xing Yoon, Soon Fatt Tan, Chuan Seng Fitzgerald, Eugene In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations |
| title | In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations |
| title_full | In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations |
| title_fullStr | In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations |
| title_full_unstemmed | In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations |
| title_short | In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations |
| title_sort | in 0 49 ga 0 51 p gaas heterojunction bipolar transistors hbts on 200 mm si substrates effects of base thickness base and sub collector doping concentrations |
| topic | Transistors DRNTU::Engineering::Electrical and electronic engineering Knee Voltage |
| url | https://hdl.handle.net/10356/105293 http://hdl.handle.net/10220/47403 http://dx.doi.org/10.1063/1.5058717 |
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