In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations

In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations

We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor d...

Full description

Bibliographic Details
Main Authors: Wang, Yue, Lee, Kwang Hong, Loke, Wan Khai, Chiah, Ben Siau, Zhou, Xing, Yoon, Soon Fatt, Tan, Chuan Seng, Fitzgerald, Eugene
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Transistors
DRNTU::Engineering::Electrical and electronic engineering
Knee Voltage
Online Access:https://hdl.handle.net/10356/105293
http://hdl.handle.net/10220/47403
http://dx.doi.org/10.1063/1.5058717

Similar Items

Similar Items