A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches
This paper presents a 7T near-threshold SRAM with design techniques for improving cell stability and energy efficiency. The proposed write through virtual ground (WTVG) scheme decreases the period of write disturbance by 6.1×. A PVT tracking sensing scheme is presented to track variation and sense s...
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105330 http://hdl.handle.net/10220/16579 http://dx.doi.org/10.1109/ISCAS.2013.6572517 |
| _version_ | 1826119267594010624 |
|---|---|
| author | Kim, Tony Tae-Hyoung Yeoh, Yuan Lin Wang, Bo Yu, Xiangyao |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Kim, Tony Tae-Hyoung Yeoh, Yuan Lin Wang, Bo Yu, Xiangyao |
| author_sort | Kim, Tony Tae-Hyoung |
| collection | NTU |
| description | This paper presents a 7T near-threshold SRAM with design techniques for improving cell stability and energy efficiency. The proposed write through virtual ground (WTVG) scheme decreases the period of write disturbance by 6.1×. A PVT tracking sensing scheme is presented to track variation and sense small RBL swing. The ultra-fine grain power gating switches are implemented to minimize the redundant leakage caused by the storage of garbage data. The leakage suppression of 52% is achieved after the initial power-up. A 16 kb SRAM test chip was fabricated in a 65nm CMOS technology and showed the minimum energy of 2.01 pJ at 0.4 V. |
| first_indexed | 2024-10-01T04:57:26Z |
| format | Conference Paper |
| id | ntu-10356/105330 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:57:26Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1053302019-12-06T21:49:16Z A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches Kim, Tony Tae-Hyoung Yeoh, Yuan Lin Wang, Bo Yu, Xiangyao School of Electrical and Electronic Engineering IEEE International Symposium on Circuits and Systems (2013 : Beijing, China) DRNTU::Engineering::Electrical and electronic engineering This paper presents a 7T near-threshold SRAM with design techniques for improving cell stability and energy efficiency. The proposed write through virtual ground (WTVG) scheme decreases the period of write disturbance by 6.1×. A PVT tracking sensing scheme is presented to track variation and sense small RBL swing. The ultra-fine grain power gating switches are implemented to minimize the redundant leakage caused by the storage of garbage data. The leakage suppression of 52% is achieved after the initial power-up. A 16 kb SRAM test chip was fabricated in a 65nm CMOS technology and showed the minimum energy of 2.01 pJ at 0.4 V. 2013-10-18T02:37:57Z 2019-12-06T21:49:16Z 2013-10-18T02:37:57Z 2019-12-06T21:49:16Z 2013 2013 Conference Paper Yeoh, Y. L., Wang, B., Yu, X., & Kim, T. T. (2013). A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches. 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), 3030 - 3033. https://hdl.handle.net/10356/105330 http://hdl.handle.net/10220/16579 http://dx.doi.org/10.1109/ISCAS.2013.6572517 en |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Kim, Tony Tae-Hyoung Yeoh, Yuan Lin Wang, Bo Yu, Xiangyao A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches |
| title | A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches |
| title_full | A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches |
| title_fullStr | A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches |
| title_full_unstemmed | A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches |
| title_short | A 0.4V 7T SRAM with write through virtual ground and ultra-fine grain power gating switches |
| title_sort | 0 4v 7t sram with write through virtual ground and ultra fine grain power gating switches |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/105330 http://hdl.handle.net/10220/16579 http://dx.doi.org/10.1109/ISCAS.2013.6572517 |
| work_keys_str_mv | AT kimtonytaehyoung a04v7tsramwithwritethroughvirtualgroundandultrafinegrainpowergatingswitches AT yeohyuanlin a04v7tsramwithwritethroughvirtualgroundandultrafinegrainpowergatingswitches AT wangbo a04v7tsramwithwritethroughvirtualgroundandultrafinegrainpowergatingswitches AT yuxiangyao a04v7tsramwithwritethroughvirtualgroundandultrafinegrainpowergatingswitches AT kimtonytaehyoung 04v7tsramwithwritethroughvirtualgroundandultrafinegrainpowergatingswitches AT yeohyuanlin 04v7tsramwithwritethroughvirtualgroundandultrafinegrainpowergatingswitches AT wangbo 04v7tsramwithwritethroughvirtualgroundandultrafinegrainpowergatingswitches AT yuxiangyao 04v7tsramwithwritethroughvirtualgroundandultrafinegrainpowergatingswitches |