Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking
Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 conta...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105523 http://hdl.handle.net/10220/17047 http://dx.doi.org/10.1109/VLSI-TSA.2012.6210174 |
| Summary: | Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 contacts at 15μm pitch is connected successfully. Cu-Cu hermetic seal ring shows helium leak rate >;10X lower than the reject limit without under-fill. This provides robust IC-to-IC connection density of 4.4 × 105 cm-2 suitable for future wafer level 3D integration. |
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