Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking
Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 conta...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105523 http://hdl.handle.net/10220/17047 http://dx.doi.org/10.1109/VLSI-TSA.2012.6210174 |
| _version_ | 1811687582729240576 |
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| author | Peng, L. Li, H. Y. Fan, Ji Gao, Shan Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Peng, L. Li, H. Y. Fan, Ji Gao, Shan Tan, Chuan Seng |
| author_sort | Peng, L. |
| collection | NTU |
| description | Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 contacts at 15μm pitch is connected successfully. Cu-Cu hermetic seal ring shows helium leak rate >;10X lower than the reject limit without under-fill. This provides robust IC-to-IC connection density of 4.4 × 105 cm-2 suitable for future wafer level 3D integration. |
| first_indexed | 2024-10-01T05:18:36Z |
| format | Conference Paper |
| id | ntu-10356/105523 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:18:36Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1055232019-12-06T21:52:57Z Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking Peng, L. Li, H. Y. Fan, Ji Gao, Shan Tan, Chuan Seng School of Electrical and Electronic Engineering International Symposium on VLSI Technology, Systems and Application (2012 : Hsinchu, Taiwan) DRNTU::Engineering::Electrical and electronic engineering Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 contacts at 15μm pitch is connected successfully. Cu-Cu hermetic seal ring shows helium leak rate >;10X lower than the reject limit without under-fill. This provides robust IC-to-IC connection density of 4.4 × 105 cm-2 suitable for future wafer level 3D integration. 2013-10-30T04:28:35Z 2019-12-06T21:52:57Z 2013-10-30T04:28:35Z 2019-12-06T21:52:57Z 2012 2012 Conference Paper Peng, L., Fan, J., Li, H. Y., Gao, S., & Tan, C. S. (2012). Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less cu-cu bonding for 3D wafer stacking. 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 1-2. https://hdl.handle.net/10356/105523 http://hdl.handle.net/10220/17047 http://dx.doi.org/10.1109/VLSI-TSA.2012.6210174 en |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Peng, L. Li, H. Y. Fan, Ji Gao, Shan Tan, Chuan Seng Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking |
| title | Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking |
| title_full | Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking |
| title_fullStr | Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking |
| title_full_unstemmed | Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking |
| title_short | Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking |
| title_sort | simultaneous formation of electrical connection mechanical support and hermetic seal with bump less cu cu bonding for 3d wafer stacking |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/105523 http://hdl.handle.net/10220/17047 http://dx.doi.org/10.1109/VLSI-TSA.2012.6210174 |
| work_keys_str_mv | AT pengl simultaneousformationofelectricalconnectionmechanicalsupportandhermeticsealwithbumplesscucubondingfor3dwaferstacking AT lihy simultaneousformationofelectricalconnectionmechanicalsupportandhermeticsealwithbumplesscucubondingfor3dwaferstacking AT fanji simultaneousformationofelectricalconnectionmechanicalsupportandhermeticsealwithbumplesscucubondingfor3dwaferstacking AT gaoshan simultaneousformationofelectricalconnectionmechanicalsupportandhermeticsealwithbumplesscucubondingfor3dwaferstacking AT tanchuanseng simultaneousformationofelectricalconnectionmechanicalsupportandhermeticsealwithbumplesscucubondingfor3dwaferstacking |