Simultaneous formation of electrical connection, mechanical support and hermetic seal with bump-less Cu-Cu bonding for 3D wafer stacking

Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 conta...

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Bibliographic Details
Main Authors: Peng, L., Li, H. Y., Fan, Ji, Gao, Shan, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Conference Paper
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/105523
http://hdl.handle.net/10220/17047
http://dx.doi.org/10.1109/VLSI-TSA.2012.6210174

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