High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices

Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼...

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Main Authors: Hu, Wenping, Jiang, Hui, Zhao, Huaping, Zhang, Keke K., Chen, Xiaodong, Kloc, Christian
Other Authors: School of Materials Science & Engineering
Format: Journal Article
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/105775
http://hdl.handle.net/10220/20968
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author Hu, Wenping
Jiang, Hui
Zhao, Huaping
Zhang, Keke K.
Chen, Xiaodong
Kloc, Christian
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Hu, Wenping
Jiang, Hui
Zhao, Huaping
Zhang, Keke K.
Chen, Xiaodong
Kloc, Christian
author_sort Hu, Wenping
collection NTU
description Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼106. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices.
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spelling ntu-10356/1057752020-06-01T10:13:41Z High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices Hu, Wenping Jiang, Hui Zhao, Huaping Zhang, Keke K. Chen, Xiaodong Kloc, Christian School of Materials Science & Engineering DRNTU::Engineering::Materials Single crystals of linear fused rings with nitrogen heteroatom, indolo[3,2-b]carbazole (ICZ), have been synthesized. In addition, field-effect transistors (FETs) of planar ICZ single crystals have been fabricated. The hole mobility approaches values of up to 1.0 cm2 V−1 s−1 with an on/off ratio of ∼106. The transistors exhibit sensitivity to nitric oxide (NO). The gas-sensitive behavior indicates the great potential for future low-cost and high-density storage devices. 2014-09-24T01:58:48Z 2019-12-06T21:57:36Z 2014-09-24T01:58:48Z 2019-12-06T21:57:36Z 2011 2011 Journal Article Jiang, H., Zhao, H., Zhang, K. K., Chen, X., Kloc, C., & Hu, W. (2011). High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices. Advanced Materials, 23(43), 5075-5080. 0935-9648 https://hdl.handle.net/10356/105775 http://hdl.handle.net/10220/20968 10.1002/adma.201102975 en Advanced materials © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
spellingShingle DRNTU::Engineering::Materials
Hu, Wenping
Jiang, Hui
Zhao, Huaping
Zhang, Keke K.
Chen, Xiaodong
Kloc, Christian
High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_full High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_fullStr High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_full_unstemmed High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_short High-performance organic single-crystal field-effect transistors of indolo[3,2-b]carbazole and their potential applications in gas controlled organic memory devices
title_sort high performance organic single crystal field effect transistors of indolo 3 2 b carbazole and their potential applications in gas controlled organic memory devices
topic DRNTU::Engineering::Materials
url https://hdl.handle.net/10356/105775
http://hdl.handle.net/10220/20968
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