Domain structure and in-plane switching in a highly strained Bi0.9Sm0.1FeO3 film
We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of...
| Main Authors: | , , , , , , , , , , , |
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| מחברים אחרים: | |
| פורמט: | Journal Article |
| שפה: | English |
| יצא לאור: |
2014
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| נושאים: | |
| גישה מקוונת: | https://hdl.handle.net/10356/105797 http://hdl.handle.net/10220/20915 |
| סיכום: | We report the domain structure and ferroelectric properties of a 32 nm-thick Bi0.9Sm0.1FeO3film epitaxially grown on a LaAlO3 (LAO) substrate. This film exhibits a monoclinic Mc phase, with its monoclinic distortion and anisotropy of in-plane (IP) lattice parameters being both smaller than those of pure BiFeO3 (BFO) grown on LaAlO3. Polarization hysteresis loops measured using a quasi-planar capacitor show an in-planepolarization up to 30 μC/cm2. Piezoresponse force microcopy demonstrates that a 180° in-planepolarization switching accompanied by a 90° domain wall rotation takes place after electric poling. First-principles calculations suggest the differences between highly strained Sm-substituted and pure BiFeO3. |
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