Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition
Bandgap engineering is necessary for the application of InSb in long wavelength infrared photodetection. InSbN alloys hetero-eptiaxially were therefore deposited on GaAs substrate by metal-organic chemical vapor deposition (MOCVD), expecting a large band gap reduction by N incorporation for long wav...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105853 http://hdl.handle.net/10220/47858 http://dx.doi.org/10.1016/j.jallcom.2018.04.287 |
| _version_ | 1826119052172460032 |
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| author | Jin, Yun Jiang Tang, Xiao Hong Ke, Chang Yu, S. Y. Zhang, Dianwen Hua |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Jin, Yun Jiang Tang, Xiao Hong Ke, Chang Yu, S. Y. Zhang, Dianwen Hua |
| author_sort | Jin, Yun Jiang |
| collection | NTU |
| description | Bandgap engineering is necessary for the application of InSb in long wavelength infrared photodetection. InSbN alloys hetero-eptiaxially were therefore deposited on GaAs substrate by metal-organic chemical vapor deposition (MOCVD), expecting a large band gap reduction by N incorporation for long wavelength infrared photodetection. The effects of post annealing treatment on the structural and optical properties of the grown InSbN alloy have been well studied. Photoluminescence measurement (PL) indicated that the longest PL wavelength obtained at 10 K is ~ 7.2 μm for the InSbN alloys, which manifests an extension of PL wavelength as large as ~ 1.8 μm in comparison to the undoped InSb epilayers, suggesting a successful band gap reduction by the N incorporation. X-ray photoelectron spectroscopy (XPS) measurements show that three kinds of nitrogen bonds co-exist in the alloys and their percentages vary with annealing conditions. This observation can explain the peak shifts of X-ray diffraction (XRD) and PL spectra. The comparison to our previous works reveals that the InSbN alloys grown on GaAs substrate can achieve more nitrogen incorporation and band gap reduction than the alloys grown on InSb and GaSb substrates. |
| first_indexed | 2024-10-01T04:53:44Z |
| format | Journal Article |
| id | ntu-10356/105853 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:53:44Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/1058532019-12-06T21:59:16Z Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition Jin, Yun Jiang Tang, Xiao Hong Ke, Chang Yu, S. Y. Zhang, Dianwen Hua School of Electrical and Electronic Engineering MOCVD DRNTU::Engineering::Electrical and electronic engineering InSb Bandgap engineering is necessary for the application of InSb in long wavelength infrared photodetection. InSbN alloys hetero-eptiaxially were therefore deposited on GaAs substrate by metal-organic chemical vapor deposition (MOCVD), expecting a large band gap reduction by N incorporation for long wavelength infrared photodetection. The effects of post annealing treatment on the structural and optical properties of the grown InSbN alloy have been well studied. Photoluminescence measurement (PL) indicated that the longest PL wavelength obtained at 10 K is ~ 7.2 μm for the InSbN alloys, which manifests an extension of PL wavelength as large as ~ 1.8 μm in comparison to the undoped InSb epilayers, suggesting a successful band gap reduction by the N incorporation. X-ray photoelectron spectroscopy (XPS) measurements show that three kinds of nitrogen bonds co-exist in the alloys and their percentages vary with annealing conditions. This observation can explain the peak shifts of X-ray diffraction (XRD) and PL spectra. The comparison to our previous works reveals that the InSbN alloys grown on GaAs substrate can achieve more nitrogen incorporation and band gap reduction than the alloys grown on InSb and GaSb substrates. Accepted version 2019-03-20T05:24:30Z 2019-12-06T21:59:16Z 2019-03-20T05:24:30Z 2019-12-06T21:59:16Z 2018 Journal Article Jin, Y. J., Tang, X. H., Ke, C., Yu, S. Y., & Zhang, D. H. (2018). Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition. Journal of Alloys and Compounds, 756, 134-138. doi:10.1016/j.jallcom.2018.04.287 0925-8388 https://hdl.handle.net/10356/105853 http://hdl.handle.net/10220/47858 http://dx.doi.org/10.1016/j.jallcom.2018.04.287 en Journal of Alloys and Compounds © 2018 Elsevier B.V. All rights reserved. This paper was published in Journal of Alloys and Compounds and is made available with permission of Elsevier B.V. 10 p. application/pdf |
| spellingShingle | MOCVD DRNTU::Engineering::Electrical and electronic engineering InSb Jin, Yun Jiang Tang, Xiao Hong Ke, Chang Yu, S. Y. Zhang, Dianwen Hua Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition |
| title | Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition |
| title_full | Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition |
| title_fullStr | Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition |
| title_full_unstemmed | Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition |
| title_short | Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition |
| title_sort | bandgap engineering of insb by n incorporation by metal organic chemical vapor deposition |
| topic | MOCVD DRNTU::Engineering::Electrical and electronic engineering InSb |
| url | https://hdl.handle.net/10356/105853 http://hdl.handle.net/10220/47858 http://dx.doi.org/10.1016/j.jallcom.2018.04.287 |
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