Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition
Bandgap engineering is necessary for the application of InSb in long wavelength infrared photodetection. InSbN alloys hetero-eptiaxially were therefore deposited on GaAs substrate by metal-organic chemical vapor deposition (MOCVD), expecting a large band gap reduction by N incorporation for long wav...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105853 http://hdl.handle.net/10220/47858 http://dx.doi.org/10.1016/j.jallcom.2018.04.287 |