High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
Off-state and vertical breakdown characteristics of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) on high-resistivity (HR)-Si substrate were investigated and analysed. Three-terminal off-state breakdown (BVgd) was measured as a function of gate–drain spacing (Lgd). The saturation of BVgd...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2014
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| Online Access: | https://hdl.handle.net/10356/106109 http://hdl.handle.net/10220/23915 http://dx.doi.org/10.1002/pssr.201004465 |
| _version_ | 1811684985729449984 |
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| author | Vicknesh, S. Ng, G. I. Liu, Z. H. Selvaraj, S. L. Egawa, T. Arulkumaran, Subramaniam |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Vicknesh, S. Ng, G. I. Liu, Z. H. Selvaraj, S. L. Egawa, T. Arulkumaran, Subramaniam |
| author_sort | Vicknesh, S. |
| collection | NTU |
| description | Off-state and vertical breakdown characteristics of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) on high-resistivity (HR)-Si substrate were investigated and analysed. Three-terminal off-state breakdown (BVgd) was measured as a function of gate–drain spacing (Lgd). The saturation of BVgd with Lgd is because of increased gate leakage current. HEMTs with Lgd = 6 µm exhibited a specific on-resistance RDS[ON] of 0.45 mΩ cm2. The figure of merit (FOM = BVgd2/RDS[ON]) is as high as 2.0 × 108 V2 Ω–1 cm–2, the highest among the reported values for GaN HEMTs on Si substrate. A vertical breakdown of ∼1000 V was observed on 1.2 µm thick buffer GaN/AlN grown on Si substrate. The occurrence of high breakdown voltage is due to the high quality of GaN/AlN buffer layers on Si substrate with reduced threading dislocations which has been confirmed by transmission electron microscopy (TEM). This indicates that the AlGaN/AlN/GaN HEMT with 1.2 µm thick GaN/AlN buffer on Si substrate is promising candidate for high-power and high-speed switching device applications. |
| first_indexed | 2024-10-01T04:37:20Z |
| format | Journal Article |
| id | ntu-10356/106109 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:37:20Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | ntu-10356/1061092019-12-06T22:04:46Z High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon Vicknesh, S. Ng, G. I. Liu, Z. H. Selvaraj, S. L. Egawa, T. Arulkumaran, Subramaniam School of Electrical and Electronic Engineering Temasek Laboratories DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics Off-state and vertical breakdown characteristics of AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) on high-resistivity (HR)-Si substrate were investigated and analysed. Three-terminal off-state breakdown (BVgd) was measured as a function of gate–drain spacing (Lgd). The saturation of BVgd with Lgd is because of increased gate leakage current. HEMTs with Lgd = 6 µm exhibited a specific on-resistance RDS[ON] of 0.45 mΩ cm2. The figure of merit (FOM = BVgd2/RDS[ON]) is as high as 2.0 × 108 V2 Ω–1 cm–2, the highest among the reported values for GaN HEMTs on Si substrate. A vertical breakdown of ∼1000 V was observed on 1.2 µm thick buffer GaN/AlN grown on Si substrate. The occurrence of high breakdown voltage is due to the high quality of GaN/AlN buffer layers on Si substrate with reduced threading dislocations which has been confirmed by transmission electron microscopy (TEM). This indicates that the AlGaN/AlN/GaN HEMT with 1.2 µm thick GaN/AlN buffer on Si substrate is promising candidate for high-power and high-speed switching device applications. 2014-09-30T07:00:58Z 2019-12-06T22:04:46Z 2014-09-30T07:00:58Z 2019-12-06T22:04:46Z 2011 2011 Journal Article Arulkumaran, S., Vicknesh, S., Ng, G. I., Liu, Z. H., Selvaraj, S. L.,& Egawa, T. (2011). High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon. Physica status solidi (RRL) - Rapid research letters, 5(1), 37-39. 1862-6254 https://hdl.handle.net/10356/106109 http://hdl.handle.net/10220/23915 http://dx.doi.org/10.1002/pssr.201004465 159185 en Physica status solidi (RRL) - Rapid research letters © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics Vicknesh, S. Ng, G. I. Liu, Z. H. Selvaraj, S. L. Egawa, T. Arulkumaran, Subramaniam High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon |
| title | High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon |
| title_full | High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon |
| title_fullStr | High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon |
| title_full_unstemmed | High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon |
| title_short | High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon |
| title_sort | high vertical breakdown strength in with low specific on resistance algan aln gan hemts on silicon |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics |
| url | https://hdl.handle.net/10356/106109 http://hdl.handle.net/10220/23915 http://dx.doi.org/10.1002/pssr.201004465 |
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