Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon
A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al2O3 and TiN is presented. It is shown that in situ ozone annealing of the Al2O3 layers prior to the TiN electrode deposition significantly improves the electric properties of the de...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/106215 http://hdl.handle.net/10220/11448 |
| _version_ | 1826110063502163968 |
|---|---|
| author | Matters-Kammerer, Marion K. Jinesh, K. B. Rijks, Theo G. S. M. Roozeboom, Fred. Klootwijk, Johan H. |
| author2 | Energy Research Institute @ NTU (ERI@N) |
| author_facet | Energy Research Institute @ NTU (ERI@N) Matters-Kammerer, Marion K. Jinesh, K. B. Rijks, Theo G. S. M. Roozeboom, Fred. Klootwijk, Johan H. |
| author_sort | Matters-Kammerer, Marion K. |
| collection | NTU |
| description | A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al2O3 and TiN is presented. It is shown that in situ ozone annealing of the Al2O3 layers prior to the TiN electrode deposition significantly improves the electric properties of the devices such as the dielectric constant, leakage current, and the breakdown voltage of the devices. The self-inductance and self-resistance of the capacitors as derived from S-parameter measurements up to 10 GHz are very small, as low as 4 pH and 6 mΩ for 19.1 mm2 electrode surface. These data are shown to be consistent with a theoretical model. |
| first_indexed | 2024-10-01T02:28:39Z |
| format | Journal Article |
| id | ntu-10356/106215 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:28:39Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1062152021-01-05T07:36:43Z Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon Matters-Kammerer, Marion K. Jinesh, K. B. Rijks, Theo G. S. M. Roozeboom, Fred. Klootwijk, Johan H. Energy Research Institute @ NTU (ERI@N) DRNTU::Engineering::Electrical and electronic engineering A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al2O3 and TiN is presented. It is shown that in situ ozone annealing of the Al2O3 layers prior to the TiN electrode deposition significantly improves the electric properties of the devices such as the dielectric constant, leakage current, and the breakdown voltage of the devices. The self-inductance and self-resistance of the capacitors as derived from S-parameter measurements up to 10 GHz are very small, as low as 4 pH and 6 mΩ for 19.1 mm2 electrode surface. These data are shown to be consistent with a theoretical model. 2013-07-15T07:42:49Z 2019-12-06T22:06:37Z 2013-07-15T07:42:49Z 2019-12-06T22:06:37Z 2012 2012 Journal Article Matters-Kammerer, M. K., Jinesh, K. B., Rijks, T. G. S. M., Roozeboom, F., & Klootwijk, J. H. (2012). Characterization and Modeling of Atomic Layer Deposited High-Density Trench Capacitors in Silicon. IEEE Transactions on Semiconductor Manufacturing, 25(2), 247-254. 0894-6507 https://hdl.handle.net/10356/106215 http://hdl.handle.net/10220/11448 10.1109/TSM.2012.2183903 en IEEE transactions on semiconductor manufacturing © 2012 IEEE. |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering Matters-Kammerer, Marion K. Jinesh, K. B. Rijks, Theo G. S. M. Roozeboom, Fred. Klootwijk, Johan H. Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon |
| title | Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon |
| title_full | Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon |
| title_fullStr | Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon |
| title_full_unstemmed | Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon |
| title_short | Characterization and modeling of atomic layer deposited high-density trench capacitors in silicon |
| title_sort | characterization and modeling of atomic layer deposited high density trench capacitors in silicon |
| topic | DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/106215 http://hdl.handle.net/10220/11448 |
| work_keys_str_mv | AT matterskammerermarionk characterizationandmodelingofatomiclayerdepositedhighdensitytrenchcapacitorsinsilicon AT jineshkb characterizationandmodelingofatomiclayerdepositedhighdensitytrenchcapacitorsinsilicon AT rijkstheogsm characterizationandmodelingofatomiclayerdepositedhighdensitytrenchcapacitorsinsilicon AT roozeboomfred characterizationandmodelingofatomiclayerdepositedhighdensitytrenchcapacitorsinsilicon AT klootwijkjohanh characterizationandmodelingofatomiclayerdepositedhighdensitytrenchcapacitorsinsilicon |