Implementation of a low noise amplifier with self-recovery capability
In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/106309 http://hdl.handle.net/10220/48956 http://dx.doi.org/10.1109/ACCESS.2019.2907524 |
| _version_ | 1811678703498821632 |
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| author | Liu, Yanchen Zhang, Caizhi Chen, Tupei Kong, Deyu Guo, Rui Wang, J. J. Wu, Yuancong Hu, S. G. Rong, L. M. Yu, Qi Liu, Yang |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Liu, Yanchen Zhang, Caizhi Chen, Tupei Kong, Deyu Guo, Rui Wang, J. J. Wu, Yuancong Hu, S. G. Rong, L. M. Yu, Qi Liu, Yang |
| author_sort | Liu, Yanchen |
| collection | NTU |
| description | In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13μm CMOS technology and the self-recovery capability has been experimentally demonstrated. |
| first_indexed | 2024-10-01T02:57:29Z |
| format | Journal Article |
| id | ntu-10356/106309 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:57:29Z |
| publishDate | 2019 |
| record_format | dspace |
| spelling | ntu-10356/1063092019-12-06T22:08:47Z Implementation of a low noise amplifier with self-recovery capability Liu, Yanchen Zhang, Caizhi Chen, Tupei Kong, Deyu Guo, Rui Wang, J. J. Wu, Yuancong Hu, S. G. Rong, L. M. Yu, Qi Liu, Yang School of Electrical and Electronic Engineering LNA HCI DRNTU::Engineering::Electrical and electronic engineering In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the RF circuits has been developed. Self-recovery mechanism of the LNA is triggered automatically by monitoring the HCI degradation to compensate for the HCI degradation. With the self-recovery capability, the LNA can maintain its performance under HCI stress over time. The proposed LNA has been fabricated with a 0.13μm CMOS technology and the self-recovery capability has been experimentally demonstrated. Published version 2019-06-26T06:47:02Z 2019-12-06T22:08:47Z 2019-06-26T06:47:02Z 2019-12-06T22:08:47Z 2019 Journal Article Liu, Y., Zhang, C., Chen, T., Kong, D., Guo, R., Wang, J. J., . . . Liu, Y. (2019). Implementation of a low noise amplifier with self-recovery capability. IEEE Access, 7, 43076-43083. doi:10.1109/ACCESS.2019.2907524 https://hdl.handle.net/10356/106309 http://hdl.handle.net/10220/48956 http://dx.doi.org/10.1109/ACCESS.2019.2907524 en IEEE Access © 2019 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information. 8 p. application/pdf |
| spellingShingle | LNA HCI DRNTU::Engineering::Electrical and electronic engineering Liu, Yanchen Zhang, Caizhi Chen, Tupei Kong, Deyu Guo, Rui Wang, J. J. Wu, Yuancong Hu, S. G. Rong, L. M. Yu, Qi Liu, Yang Implementation of a low noise amplifier with self-recovery capability |
| title | Implementation of a low noise amplifier with self-recovery capability |
| title_full | Implementation of a low noise amplifier with self-recovery capability |
| title_fullStr | Implementation of a low noise amplifier with self-recovery capability |
| title_full_unstemmed | Implementation of a low noise amplifier with self-recovery capability |
| title_short | Implementation of a low noise amplifier with self-recovery capability |
| title_sort | implementation of a low noise amplifier with self recovery capability |
| topic | LNA HCI DRNTU::Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/106309 http://hdl.handle.net/10220/48956 http://dx.doi.org/10.1109/ACCESS.2019.2907524 |
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