Implementation of a low noise amplifier with self-recovery capability

Implementation of a low noise amplifier with self-recovery capability

In this paper, an RF low noise amplifier (LNA) with self-recovery capability has been designed and implemented. A degradation model of hot carrier injection (HCI) of n-channel MOSFETs is proposed to simulate the aging process of the RF circuits, and a method for monitoring the HCI degradation in the...

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Bibliographic Details
Main Authors:	Liu, Yanchen, Zhang, Caizhi, Chen, Tupei, Kong, Deyu, Guo, Rui, Wang, J. J., Wu, Yuancong, Hu, S. G., Rong, L. M., Yu, Qi, Liu, Yang
Other Authors:	School of Electrical and Electronic Engineering
Format:	Journal Article
Language:	English
Published:	2019
Subjects:	LNA HCI DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/106309 http://hdl.handle.net/10220/48956 http://dx.doi.org/10.1109/ACCESS.2019.2907524

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