Detection of Ge and Si intermixing in Ge/Si using multiwavelength micro-raman spectroscopy

Detection of Ge and Si intermixing in Ge/Si using multiwavelength micro-raman spectroscopy

To meet various physical property requirements of materials for advanced application, for specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si, are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used. Since a small variation...

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Bibliographic Details
Main Authors: Yoo, Woo Sik, Kang, Kitaek, Ueda, Takeshi, Ishigaki, Toshikazu, Nishigaki, Hiroshi, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Online Access:https://hdl.handle.net/10356/106532
http://hdl.handle.net/10220/25012
http://dx.doi.org/10.1149/06406.0079ecst

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