Contrast and Raman spectroscopy study of single- and few-layered charge density wave material : 2H-TaSe2

In this article, we report the first successful preparation of single- and few-layers of tantalum diselenide (2H-TaSe2) by mechanical exfoliation technique. Number of layers is confirmed by white light contrast spectroscopy and atomic force microscopy (AFM). Vibrational properties of the atomically...

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Main Authors: Hajiyev, Parviz, Cong, Chunxiao, Qiu, Caiyu, Yu, Ting
Other Authors: School of Physical and Mathematical Sciences
Format: Journal Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/106750
http://hdl.handle.net/10220/16637
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author Hajiyev, Parviz
Cong, Chunxiao
Qiu, Caiyu
Yu, Ting
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Hajiyev, Parviz
Cong, Chunxiao
Qiu, Caiyu
Yu, Ting
author_sort Hajiyev, Parviz
collection NTU
description In this article, we report the first successful preparation of single- and few-layers of tantalum diselenide (2H-TaSe2) by mechanical exfoliation technique. Number of layers is confirmed by white light contrast spectroscopy and atomic force microscopy (AFM). Vibrational properties of the atomically thin layers of 2H-TaSe2 are characterized by micro-Raman spectroscopy. Room temperature Raman measurements demonstrate MoS2-like spectral features, which are reliable for thickness determination. E1g mode, usually forbidden in backscattering Raman configuration is observed in the supported TaSe2 layers while disappears in the suspended layers, suggesting that this mode may be enabled because of the symmetry breaking induced by the interaction with the substrate. A systematic in-situ low temperature Raman study, for the first time, reveals the existence of incommensurate charge density wave phase transition in single and double-layered 2H-TaSe2 as reflected by a sudden softening of the second-order broad Raman mode resulted from the strong electron-phonon coupling (Kohn anomaly).
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spelling ntu-10356/1067502023-02-28T19:21:44Z Contrast and Raman spectroscopy study of single- and few-layered charge density wave material : 2H-TaSe2 Hajiyev, Parviz Cong, Chunxiao Qiu, Caiyu Yu, Ting School of Physical and Mathematical Sciences In this article, we report the first successful preparation of single- and few-layers of tantalum diselenide (2H-TaSe2) by mechanical exfoliation technique. Number of layers is confirmed by white light contrast spectroscopy and atomic force microscopy (AFM). Vibrational properties of the atomically thin layers of 2H-TaSe2 are characterized by micro-Raman spectroscopy. Room temperature Raman measurements demonstrate MoS2-like spectral features, which are reliable for thickness determination. E1g mode, usually forbidden in backscattering Raman configuration is observed in the supported TaSe2 layers while disappears in the suspended layers, suggesting that this mode may be enabled because of the symmetry breaking induced by the interaction with the substrate. A systematic in-situ low temperature Raman study, for the first time, reveals the existence of incommensurate charge density wave phase transition in single and double-layered 2H-TaSe2 as reflected by a sudden softening of the second-order broad Raman mode resulted from the strong electron-phonon coupling (Kohn anomaly). Published version 2013-10-21T03:29:17Z 2019-12-06T22:17:35Z 2013-10-21T03:29:17Z 2019-12-06T22:17:35Z 2013 2013 Journal Article Hajiyev, P., Cong, C., Qiu, C.,& Yu, T. (2013). Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2. Scientific Reports, 3. 2045-2322 https://hdl.handle.net/10356/106750 http://hdl.handle.net/10220/16637 10.1038/srep02593 24005335 en Scientific reports © 2013 Nature Publishing Group. This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf
spellingShingle Hajiyev, Parviz
Cong, Chunxiao
Qiu, Caiyu
Yu, Ting
Contrast and Raman spectroscopy study of single- and few-layered charge density wave material : 2H-TaSe2
title Contrast and Raman spectroscopy study of single- and few-layered charge density wave material : 2H-TaSe2
title_full Contrast and Raman spectroscopy study of single- and few-layered charge density wave material : 2H-TaSe2
title_fullStr Contrast and Raman spectroscopy study of single- and few-layered charge density wave material : 2H-TaSe2
title_full_unstemmed Contrast and Raman spectroscopy study of single- and few-layered charge density wave material : 2H-TaSe2
title_short Contrast and Raman spectroscopy study of single- and few-layered charge density wave material : 2H-TaSe2
title_sort contrast and raman spectroscopy study of single and few layered charge density wave material 2h tase2
url https://hdl.handle.net/10356/106750
http://hdl.handle.net/10220/16637
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AT qiucaiyu contrastandramanspectroscopystudyofsingleandfewlayeredchargedensitywavematerial2htase2
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