Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte
Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are re...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/106825 http://hdl.handle.net/10220/17611 http://dx.doi.org/10.1109/TED.2013.2258922 |
| _version_ | 1826115736385355776 |
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| author | Jiang, Jie Wan, Qing Zhang, Qing |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Jiang, Jie Wan, Qing Zhang, Qing |
| author_sort | Jiang, Jie |
| collection | NTU |
| description | Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO2 film (~5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (~10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5×107), and a smaller bias-stressing threshold voltage shift (ΔVth=0.13 V) . A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design. |
| first_indexed | 2024-10-01T04:00:03Z |
| format | Journal Article |
| id | ntu-10356/106825 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:00:03Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1068252019-12-06T22:19:12Z Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte Jiang, Jie Wan, Qing Zhang, Qing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Transparent junctionless organic-inorganic hybrid electric-double-layer thin-film transistors are demonstrated using a reinforced solution-processed chitosan-based biopolymer electrolyte as a dielectric layer. The specific feature of such device is that the channel and source/drain electrodes are realized using a thin indium tin oxide (ITO) film without any source/drain junction. A SiO2 film (~5 nm)/chitosan organic-inorganic hybrid bilayer dielectric is found to be an efficient way to improve the stability and performance of the devices. Our results indicate that the transistor gated by organic-inorganic hybrid bilayer dielectric with a thin ITO channel (~10 nm) exhibited a better performance with a lower subthreshold swing (84 mV/dec), a larger ON/OFF ratio (5.5×107), and a smaller bias-stressing threshold voltage shift (ΔVth=0.13 V) . A physical model based on energy diagram with 1-D Poisson equation is proposed to interpret the operating mechanism. These results clearly show that the proposed architecture can provide a new opportunity for the next-generation low-voltage low-cost device design. 2013-11-12T08:11:00Z 2019-12-06T22:19:12Z 2013-11-12T08:11:00Z 2019-12-06T22:19:12Z 2013 2013 Journal Article Jiang, J., Wan, Q., & Zhang, Q. (2013). Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte. IEEE Transactions on Electron Devices, 60(6), 1951-1957. 0018-9383 https://hdl.handle.net/10356/106825 http://hdl.handle.net/10220/17611 http://dx.doi.org/10.1109/TED.2013.2258922 en IEEE transactions on electron devices |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Jiang, Jie Wan, Qing Zhang, Qing Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
| title | Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
| title_full | Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
| title_fullStr | Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
| title_full_unstemmed | Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
| title_short | Transparent junctionless electric-double-layer transistors gated by a reinforced chitosan-based biopolymer electrolyte |
| title_sort | transparent junctionless electric double layer transistors gated by a reinforced chitosan based biopolymer electrolyte |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
| url | https://hdl.handle.net/10356/106825 http://hdl.handle.net/10220/17611 http://dx.doi.org/10.1109/TED.2013.2258922 |
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