Characterization of hetero-epitaxial Ge films on Si using multiwavelength micro-raman spectroscopy
To meet various physical property requirements of materials for advanced applications for specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si, are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used. Since a small variation...
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/106992 http://hdl.handle.net/10220/25240 http://dx.doi.org/10.1149/2.0041502jss |