A hole modulator for InGaN/GaN light-emitting diodes

A hole modulator for InGaN/GaN light-emitting diodes

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase...

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Bibliographic Details
Main Authors: Zhang, Zi-Hui, Kyaw, Zabu, Liu, Wei, Ji, Yun, Wang, Liancheng, Tan, Swee Tiam, Sun, Xiao Wei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2015
Subjects:
DRNTU::Science::Physics::Optics and light
Online Access:https://hdl.handle.net/10356/106993
http://hdl.handle.net/10220/25278

Internet

https://hdl.handle.net/10356/106993
http://hdl.handle.net/10220/25278

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