Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition
The effect of post-deposition annealing on chemical bonding states at interface between Al0.5Ga0.5N and ZrO2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/...
| Main Authors: | , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2015
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| Online Access: | https://hdl.handle.net/10356/107095 http://hdl.handle.net/10220/25321 http://dx.doi.org/10.1063/1.4914351 |
| _version_ | 1826116259992829952 |
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| author | Ye, Gang Wang, Hong Ng, Serene Lay Geok Ji, Rong Arulkumaran, Subramaniam Ng, Geok Ing Li, Yang Liu, Zhi Hong Ang, Kian Siong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Ye, Gang Wang, Hong Ng, Serene Lay Geok Ji, Rong Arulkumaran, Subramaniam Ng, Geok Ing Li, Yang Liu, Zhi Hong Ang, Kian Siong |
| author_sort | Ye, Gang |
| collection | NTU |
| description | The effect of post-deposition annealing on chemical bonding states at interface between Al0.5Ga0.5N and ZrO2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO2 on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO2/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO2/AlGaN interface are easier to get oxidized as compared with Ga atoms. |
| first_indexed | 2024-10-01T04:08:25Z |
| format | Journal Article |
| id | ntu-10356/107095 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:08:25Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1070952019-12-06T22:24:36Z Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition Ye, Gang Wang, Hong Ng, Serene Lay Geok Ji, Rong Arulkumaran, Subramaniam Ng, Geok Ing Li, Yang Liu, Zhi Hong Ang, Kian Siong School of Electrical and Electronic Engineering DRNTU::Science::Physics::Atomic physics The effect of post-deposition annealing on chemical bonding states at interface between Al0.5Ga0.5N and ZrO2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO2 on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO2/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO2/AlGaN interface are easier to get oxidized as compared with Ga atoms. Published version 2015-04-06T07:58:37Z 2019-12-06T22:24:36Z 2015-04-06T07:58:37Z 2019-12-06T22:24:36Z 2015 2015 Journal Article Ye, G., Wang, H., Ng, S. L. G., Ji, R., Arulkumaran, S., Ng, G. I., et al. (2015). Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition. Applied physics letters, 106(9), 091603-. https://hdl.handle.net/10356/107095 http://hdl.handle.net/10220/25321 http://dx.doi.org/10.1063/1.4914351 en Applied physics letters © 2015 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4914351]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf |
| spellingShingle | DRNTU::Science::Physics::Atomic physics Ye, Gang Wang, Hong Ng, Serene Lay Geok Ji, Rong Arulkumaran, Subramaniam Ng, Geok Ing Li, Yang Liu, Zhi Hong Ang, Kian Siong Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition |
| title | Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition |
| title_full | Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition |
| title_fullStr | Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition |
| title_full_unstemmed | Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition |
| title_short | Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition |
| title_sort | impact of post deposition annealing on interfacial chemical bonding states between algan and zro2 grown by atomic layer deposition |
| topic | DRNTU::Science::Physics::Atomic physics |
| url | https://hdl.handle.net/10356/107095 http://hdl.handle.net/10220/25321 http://dx.doi.org/10.1063/1.4914351 |
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